1) gate dielectric
栅极电介质
1.
Traditional SiO\-2 gate dielectric materials fail to overcome the influence brought on by the quantum\|mechanical tunneling\|effect,which is induced by the scaling down of the MOSFET.
传统的SiO2 栅极电介质材料无法克服MOS器件特征尺度缩小带来的量子隧穿效应的影响 。
2.
With the rapid development of semiconductor, traditional SiO2 gate dielectric materials fail to overcome the influence brought on by the quantum-mechanical tunneling-effect, which is induced by the further scaling-down of the MOSFET devices, and then improving the integration of microelectronic devices are greatly restricted.
因此寻找新一代MOSFET栅极电介质材料来取代SiO2已经成为人们研究的热门课题。
2) gate dielectric materials
栅极电介质材料
3) gate dielectric layer
栅极介电层
5) Multi-layer dielectric gratings
多层电介质光栅
6) Dielectric polarization
电介质极化
1.
Nonlinear theory of dielectric polarization:Electron as soliton
电介质极化的非线性理论——作为孤立子的电子
补充资料：液体电介质电击穿
液体电介质电击穿
breakdown in dielectric liquids
丫e们d{0川旧7日妇ch日on液体电介质击穿(b reakdownindielectricliquids)在电场作用下，液体电介质由绝缘状态突变为良导电状态的过程。 液体电介质击穿过程的试验研究还不很充分，全面描述液体电介质击穿的理论尚未形成。对于纯净的液体电介质，存在两种用来解释击穿过程的理论—电击穿理论(见液体电介质电击穿)和气泡击穿理论(见液休电介质气泡击穿)。对于或多或少含有水分、纤维等杂质的工程用液体电介质的击穿过程，可用小桥击穿理论(见液体电介质小桥击穿)解释二
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条