1) SiO_xN_y gate dielectrics
SiOxNy栅介质
2) SiOxNy thin dielectric film
SiOxNy薄介质膜
1.
The microscopical composition and relationship in the composition to fabricated filmprocess of SiOxNy thin dielectric film formed by low temperature PECVD were analysed with AESand infrared absorption spectra.
采用俄歇电子能谱和红外吸收光谱分析PECVD法低温形成SiOxNy薄介质膜的微观组分及其与制膜工艺间关系,通过椭圆偏振技术测试该薄膜的物理光学性能。
3) gate dielectric
栅介质
1.
In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide.
通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0。
2.
The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
3.
The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds.
对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。
4) dielectric grating
介质栅
1.
Characteristics of electromagnetic band-gap structure with stratified crossed dielectric gratings;
交错叠层型介质栅电磁带隙结构的特性
2.
A new type of dielectric grating waveguide filter based on left-handed material(LHM) was proposed and its band-rejected characteristics were carefully analyzed by a method which combines the rigorous mode matching procedure with multimode network method.
提出了一种新型的基于左手介质的介质栅波导阻带滤波结构,并采用多模网络与严格模匹配相结合的方法,对该左手介质栅波导阻带滤波特性进行仔细严格的分析;给出了主模的B rillou in图,以及滤波结构的归一化中心频率、阻带的宽度和带内最大衰减等特性和结构参数的关系,并与传统右手介质栅波导作了比较,说明了产生两者不同特性的原因。
5) SiO2 gate dielectrics
SiO2栅介质
1.
Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed.
综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。
6) MOSFET-gate dielectric
MOSFET栅介质
1.
The new research of MOSFET-gate dielectric was summarized.
本文综述了MOSFET栅介质的最新研究状况。
补充资料：X线滤线栅半径
X线滤线栅半径
放射学术语。又称栅-焦距。呈弧形排列的滤线栅铅条与充填物高度的延长线于空间聚焦为一点，此聚焦点到栅平面的垂直距离为栅-焦距。用于聚焦式滤线栅。栅-焦距有75、90、100、120、200cm 几种。使用聚焦式滤线栅时，原则
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条