1) Zr-O film
Zr-O薄膜
1.
Compositions of Zr-O films prepared by using dual ion beam technique with oxygn ion bombardment are studied with RBS and XPS.
离子束溅射沉积锆的同时以氧离子轰击形成Zr－O薄膜，经RBS及XPS分析表明薄膜由3部分组成：表面碳沾污层；Zr－O膜体；膜与基体的界面过渡层。
2) Zr-N film
Zr-N薄膜
1.
In order to investigate the effect of substrate temperature on diffusion barrier properties of Zr-N films,4-point probe technique(FPP),atomic force microscope(AFM),X-ray diffraction(XRD),and auger electron spectroscopy(AES) were performed respectively.
用四探针电阻测试仪(FPP)、AFM、XRD、AES研究了沉积温度对Zr-N薄膜扩散阻挡性能的影响。
3) ZnO∶Zr thin films
ZnO∶Zr薄膜
4) Zr-Cu-N film
Zr-Cu-N薄膜
5) Zr-Ni-N film
Zr-Ni-N薄膜
6) Zr-Ti-N thin film
Zr-Ti-N薄膜
补充资料：2,4-pentanedione, zr deriv.
7501-44-9
分子式: C20H28O8Zr
分子质量: 487.65
熔点: 171-173℃
中文名称: 四(2,4-戊二酮)锆
英文名称: tetrakis(2,4-pentanedionato-O,O')-, (SA-8-11''11''1'1'''1'1''')-Zirconium；tetrakis(2,4-pentanedionato-o,o')-zirconiu ；2,4-pentanedione, zirconium complex；2,4-pentanedione, zr deriv.；nasemu zirconium；orgatix zc 150；tetraacetylacetonate zirconium；tetrakis(acetylacetonato)zirconium
分子式: C20H28O8Zr
分子质量: 487.65
熔点: 171-173℃
中文名称: 四(2,4-戊二酮)锆
英文名称: tetrakis(2,4-pentanedionato-O,O')-, (SA-8-11''11''1'1'''1'1''')-Zirconium；tetrakis(2,4-pentanedionato-o,o')-zirconiu ；2,4-pentanedione, zirconium complex；2,4-pentanedione, zr deriv.；nasemu zirconium；orgatix zc 150；tetraacetylacetonate zirconium；tetrakis(acetylacetonato)zirconium
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条