1) hot-wall chemical vapor deposition
热壁化学气相沉积
1.
GaN films on Si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated.
采用热壁化学气相沉积工艺在 Si(111)衬底上生长 GaN 晶体膜,并对其生长条件进行研究。
2) thermal chemical vapor deposition(TCVD)
热化学气相沉积
3) hot-wall CVD
热壁化学汽相沉积
1.
GaN films were deposited on Si(111)substrates during the process of hot-wall CVD.
利用热壁化学汽相沉积在Si基上生长GaN薄膜。
4) hot filament chemical vapor deposition
热丝化学气相沉积
1.
Study of diamond film by direct current cathode-hot filament chemical vapor deposition;
直流等离子体-热丝化学气相沉积金刚石薄膜的研究
2.
Diamond films are deposited on tungsten carbide YG6 by hot filament chemical vapor deposition.
采用热丝化学气相沉积法在YG6硬质合金基体上制备出了金刚石薄膜,研究了基片与热丝间的距离以及负偏压对金刚石薄膜的生长取向和内应力的影响。
3.
The existed hot filament chemical vapor deposition(HFCVD) system is improved.
首先对热丝化学气相沉积(Chem ica l vapor depos ition,CVD)系统进行改造,设计了在真空室外对室内试样进行操纵的机械手系统和储料台,实现了一次热丝碳化后完成多个不同工艺条件下试样的连续沉积。
5) HFCVD
热丝化学气相沉积
1.
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
2.
Two-dimension coupled model of the temperature filed, velocity field and density field was developed according to the geometry and technology parameters in hot filament chemical vapor deposition (HFCVD) diamond film.
根据热丝化学气相沉积(HFCVD)金刚石薄膜的几何特点和工艺参数,建立了该系统的二维温度场、速度场和密度场 的耦合模型。
3.
When the relative parameters of hot filaments were fixed at the optimal values, the irradiance distribution and the temperature distribution of substrate were simulated during the growing process HFCVD diamond films.
热丝化学气相沉积（HFCVD）生长金刚石膜过程中,在热丝相关工艺参数取优化值的前提下,对热辐射平衡体系中衬底表面辐照度和衬底温度的空间分布进行了模拟计算,探讨了衬底横向热传导对衬底温度分布的影响。
6) Hot-wire CVD
热丝化学气相沉积
1.
Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD;
热丝化学气相沉积制备多晶硅薄膜的研究
2.
Hot-wire CVD (HWCVD) is widely used to deposit a-Si: H and poly-Si films, due to many advantages compared with other methods, including being much simpler and easier to adopt for large-area deposition at a lower cost, low deposition temperature and high deposition rate.
在多晶硅薄膜的各种制备技术中，热丝化学气相沉积法(HWCVD)以其低沉积温度、高沉积速率和低成本的特点而被广泛采用。
3.
Influence of Metal Underlayers on Low-temperature Deposition of Poly-silicon Thin Films by Hot-wire CVD;
采用热丝化学气相沉积(HWCVD)方法分别在镀Ag、镀Cu玻璃衬底上低温沉积出高质量多晶硅薄膜。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条