1) δ-doping-layer
δ掺杂层
1.
Hole-sheet-density in SiGe pMOS quantum well with δ-doping-layer;
含有δ掺杂层的SiGe pMOS量子阱沟道空穴面密度研究
2) doped LaCoO3-δ
掺杂LaCoO3-δ
3) δ-doping
δ掺杂
1.
The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.
用X射线衍射方法通过不同晶面的ω扫描测试,分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。
4) carbon δ-doping
碳δ掺杂
5) Zinc δ doping
锌δ掺杂
6) δ-doped
δ掺杂
1.
Our results for Si δ-doped GaAs indicate that all the Si peaks of SIMS depth profile show asymmetric broadening and surface segregation increases with growth temperature,however,which are not influencing the diffusion of Si atoms.
利用二次离子质谱（SIMS）和电化学剖面C－V方法研究了生长温度对GaAs中理想Siδ掺杂结构的偏离和掺杂原子电激活效率的影响。
2.
We report photoluminescence studies of internal transitions of shallow Be acceptors in bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum w ell samples with well width ranging from 3 to 20nm.
报道了掺杂在GaAs体材料中和δ掺杂在一系列GaAs/AlAs多量子阱中的Be受主带间跃迁的光致发光。
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