1) doping GaAs MQW
δ掺杂GaAs多量子阱
2) GaAs/AlGaAs multiquantum well
AlGaAs/GaAs多量子阱
3) GaAs/AlAs multiple quantum wells
GaAs/AlAs多量子阱
1.
A series of Be delta-doped GaAs/AlAs multiple quantum wells with the doping at the well center were grown on a semi-insulating (100) GaAs substrate .
从实验和理论上,研究了量子限制效应对GaAs/AlAs多量子阱中受主对重空穴束缚能的影响。
2.
A series of Be delta-doped GaAs/AlAs multiple quantum wells with the doping at the well center are grown by molecular beam epitaxy.
从实验和理论上,研究了量子限制效应对限制在GaAs/AlAs多量子阱中受主对重空穴束缚能的影响。
4) InGaAs/GaAs MQW
InGaAs/GaAs多量子阱
5) GaAs quantum well
GaAs量子阱
1.
Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time-and space-resolved absorbtion spectroscopy
本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究
6) modulated doping QW
调制掺杂量子阱
1.
With the novel modulated doping QW base and buried metal self-align process, the base lateral resistance and contact resistance of ultra-thin-base small-size SiGe HBTs are decreased by 42% and 55% respectively, which provides an effective method of resolution on base serial resistance.
采用新型调制掺杂量子阱基区结构和掩埋金属自对准工艺方法,在器件的纵向结构和制备手段上同时进行改进,使超薄基区小尺寸SiGeHBT的基区横向电阻和接触电阻分别降低42%和55%以上,有效解决了基区串联电阻的问题。
补充资料：多量子阱(见量子阱)
多量子阱(见量子阱)
multiple quantum well
多t子阱multiple quanturn well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条