1) gate dielectrics lifetime
栅介质寿命
1.
The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.
结果表明 ,同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ,前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 。
2) gate dielectrics lifetime projection
栅介质寿命预测
1.
A common way for the ultra-thin gate dielectrics lifetime projection with the CVS method is given.
1nm的纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质为例 ,给出了恒定电压应力下超薄栅介质寿命预测的一般方法 ,并在此基础上比较了纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质在恒压应力下的寿命 。
3) infinite medium neutron lifetime
无限介质中子寿命
5) SiO_xN_y gate dielectrics
SiOxNy栅介质
6) gate dielectric
栅介质
1.
In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide.
通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0。
2.
The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
3.
The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds.
对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。
补充资料：X线滤线栅半径
X线滤线栅半径
放射学术语。又称栅-焦距。呈弧形排列的滤线栅铅条与充填物高度的延长线于空间聚焦为一点，此聚焦点到栅平面的垂直距离为栅-焦距。用于聚焦式滤线栅。栅-焦距有75、90、100、120、200cm 几种。使用聚焦式滤线栅时，原则
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条