1.
Physical and Electrical Properties of ZrO_2 Gate Dielectrics Film
高介电栅介质ZrO_2薄膜的物理电学性能
2.
Preparation and Property of High-k HfO_2 Gate Dielectric Materials
高介电常数HfO_2栅介质的制备及性能
3.
Gate Leakage Properties of Small-Scaled High-k Gate Dielectric MOS Devices;
小尺寸高k栅介质MOS器件栅极漏电特性研究
4.
Electrical Properties of High-k Gate Dielectric SiGe MOS Devices;
高k栅介质SiGe MOS器件电特性研究
5.
Study on Surface and Interfacial Characteristics of HfO_2 High-k Gate Dielectric
HfO_2栅介质的表面界面特性研究
6.
Influences of Different Interlayers on Properties of MOS with HfTaON Gate Dielectric
不同界面层对HfTaON栅介质MOS特性的影响
7.
Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics
超薄高k栅介质Ge-pMOSFET的电特性研究
8.
Thermal stability and electrical properties of high-k LaErO_3 films
作为高介电常数栅介质材料的LaErO_3薄膜热稳定性和电学性质的研究
9.
Model and Technology of High-k Gate Dielectric MOS Devices;
高k栅介质MOS器件模型和制备工艺研究
10.
Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric;
小尺寸MOSFET阈值电压模型及高k栅介质制备
11.
Modeling and Preparation of High-κ Gate Dielectric Ge-Based MOS Devices;
高κ栅介质Ge基MOS器件模型及制备工艺研究
12.
Gate Dielectric Breakdown of Very-Deep Sub-micron n-channel Si-MOSFET;
超深亚微米n沟道Si-MOSFET中栅介质的击穿
13.
Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics
高K栅介质HfSi_xO_y薄膜的制备工艺与结构分析
14.
Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film
反应溅射SiO_xN_y栅介质薄膜的成分及C-V特性研究
15.
Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3
N_2和NH_3退火对铪铝氧栅介质C-V特性的影响
16.
Fabrication and Characteristics Study of Hf-based High-k Gate Dielectrics Thin Films;
铪基高介电常数栅介质薄膜的制备及其物性研究
17.
Physical and electrical properties of the high-κ dielectrics with Ni and Al inclusion in HfO_2
高介电栅介质材料HfO_2掺杂后的物理电学特性(英文)
18.
Analysis of Performance of 0.25 μm Dielectric Defined Gate and Normal Process Gate PHEMTs
0.25μm介质栅与非介质栅PHEMT的性能比较分析