1) Groove gate MOS devices
槽栅MOS器件
1.
The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage, sub-threshold slope and saturation driving current sever.
SOI技术和槽栅MOS新器件结构是在改善器件特性方面的两大突破,SOI槽栅MOS器件结构能够弥补体硅槽栅MOS器件在驱动能力和亚阈值特性方面的不足,同时也保证了在深亚微米领域的抑制短沟道效应和抗热载流子效应的能力。
3) trench MOS
槽栅MOS
4) Ultra Thin Gate Oxide MOS Transistors
超薄栅MOS器件
5) groove-gate MOSFETs
槽栅器件
1.
The groove-and planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO,and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects.
采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析,结果表明槽栅器件能够有效地抑制短沟道及热载流子效应,而拐角效应是槽栅器件优于平面器件特性更加稳定的原因。
6) MOS device
MOS器件
1.
Application of 1/f noise in monitoring electrostatic latent damage in MOS devices;
MOS器件静电潜在损伤的1/f噪声监测方法
2.
Measurement of total dose effects on MOS devices and circuits;
MOS器件及电路的总剂量辐射效应测试技术
3.
Research on applocation of 1/f noise in detecting latent damage in MOS devices;
MOS器件潜在损伤的1/f噪声检测方法研究
补充资料：E/D MOS电路
见增强型与耗尽型金属-氧化物-半导体集成电路。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条