1) FD device
全耗尽MOS器件
2) Fully depleted device
全耗尽器件
3) Depletion MOS transistor
耗尽型MOS管
4) Depleted MOS transistor
耗尽型MOS晶体管
6) fully depleted
全耗尽
1.
Research of SOI CMOS Integrated Circuit Based on Fully Depleted Technology;
基于全耗尽技术的SOI CMOS集成电路研究
2.
The Research of Deep Submicron Fully Depleted SOI MOSFET Parameter Extraction Method;
深亚微米全耗尽SOI MOSFET参数提取方法的研究
3.
With the reduction of critical dimension,the device that have higher driving ability and good short channel effect is one of the focuses and multiple-gate fully depleted SOI MOSFET can resolve this problem effectively due to better control ability in the channel.
随着器件尺寸的不断缩小,对更大驱动电流和更有效抑制短沟道效应器件的研制成为研究的热点,SOI多栅全耗尽器件由于对沟道更好控制能力能够有效地解决尺寸缩小带来的短沟道效应问题[1]。
补充资料：耗尽
1.消减净尽。 2.用完。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条