1.
Study and Fabrication of SOI/SiGe MOS Device;
SOI/SiGe MOS器件研究和制备
2.
The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;
深亚微米MOS器件热载流子效应研究
3.
Study on Materials and Processes of Strained Si MOSFETs;
应变硅MOS器件的材料和工艺研究
4.
Direct Tunneling Processes in Nano-Metal-Oxide Semiconductor Devices;
纳米MOS器件中直接隧穿过程的研究
5.
Study on the Structure and Reliability of Deep Submicrion SDE MOSFET;
深亚微米SDE MOS器件结构及可靠性研究
6.
Research on The Breakdown Voltage of SOI High Voltage MOS Devices;
SOI高压MOS器件击穿特性研究
7.
THE STUDY ON TECHNIQUES OF SIC MOS DEVICE AND CIRCUITS;
碳化硅MOS器件和电路技术的研究
8.
Electrical Properties of High-k Gate Dielectric SiGe MOS Devices;
高k栅介质SiGe MOS器件电特性研究
9.
A Research on RTS Noise in Ultra Deep Submicron MOS Devices;
超深亚微米MOS器件RTS噪声研究
10.
Theoretical Investigation of Silicon Carbide Materials and Silicon Carbide Based MOS Devices;
SiC材料及SiC基MOS器件理论研究
11.
Study on Spice Modeling for Strained Si/SiGe MOSFET
基于Spice的应变Si/SiGe MOS器件模型研究
12.
Improvement on SOI DTMOSFET Structure
SOI动态阈值MOS器件结构改进
13.
Total Dose Radiation Characteristics of SOI MOSFET
超高总剂量辐射下SOI MOS器件特性研究
14.
Model and Technology of High-k Gate Dielectric MOS Devices;
高k栅介质MOS器件模型和制备工艺研究
15.
Gate Leakage Properties of Small-Scaled High-k Gate Dielectric MOS Devices;
小尺寸高k栅介质MOS器件栅极漏电特性研究
16.
Simulation of Quantum Transport Effects in Nano-scaled Double-Gate MOSFETs;
纳米双栅MOS器件量子输运效应的模拟研究
17.
Study on HVMOS Device Technology Compatible with Conventional CMOS Process;
与常规CMOS工艺相兼容的高压MOS器件工艺研究
18.
Research on applocation of 1/f noise in detecting latent damage in MOS devices;
MOS器件潜在损伤的1/f噪声检测方法研究