1) intersubband interwell transitions
子带阱间跃迁
2) intersubband transition
子带间跃迁
1.
Influence of structure and doping concentration of Al_xGa_(1-x) N/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions;
Al_xGa_(1-x)N/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响
2.
The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions (ISBT) in Al_xGa_ 1-x N/GaN coupled double quantum wells (DQWs) is investigated by self-consistent calculation.
用自洽计算的方法研究了极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质和电子分布的影响。
3.
The large conduction band offset leads to the short intersubband transition (ISBT) wavelength within the optical communication wavelength range.
大的导带偏移有利于在Al_xGa_(1-x)N/GaN量子阱中获得短波长的子带间跃迁,其跃迁波长可达光纤通信波段,大的LO声子能量和大的电子有效质量有利于获得超快的载流子弛豫机制。
4) subband transition
子带跃迁
1.
The subband transition of In_xGa_(1-x)As_ySb_(1-y)/Al_(0.
98量子阱激光器结构的子带跃迁波长及其和阱宽间的关系进行了设计,并采用能量平衡模型计算了此应变材料体系在生长时的临界厚度。
5) intersubband transition
子带跃迁
1.
In this thesis, the interband and intersubband transition (ISBT) optical absorption spectra in a quantum well (QW) are numerically simulated by using density matrix theory, the optical absorption and intraband dynamics of a superlattice (SL) are investigated by using exciton.
2、推导了外加光场作用下的量子阱子带跃迁时载流子运动方程;分别研究了GaAs/AlGaAs和InAs/AlSb量子阱中多体效应对子带跃迁的影响;研究了不同阱宽对子带跃迁光吸收的影响。
6) oscillator strengths for interband transitions
带间光跃迁振子强度
1.
The oscillator strengths for interband transitions of strained GaAs layers grown on GexSi1-x alloys along the (001) plane and the third-order nonlinear optical susceptibilities of strained superlattices (Si2)4/(GaAs).
采用紧束缚方法计算了生长在ＣｅｘＳｉ１－ｘ合金（００１）面上的应变ＧａＡｓ层的带间光跃迁振子强度，以及生长在Ｓｉ（００１）衬底上的应变超晶格（Ｓｉ２）４／（ＧａＡｓ）４的三次非线性光极化率。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条