1) interband(intraband)transition
带间(带内)跃迁
3) intersubband transition
子带间跃迁
1.
Influence of structure and doping concentration of Al_xGa_(1-x) N/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions;
Al_xGa_(1-x)N/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响
2.
The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions (ISBT) in Al_xGa_ 1-x N/GaN coupled double quantum wells (DQWs) is investigated by self-consistent calculation.
用自洽计算的方法研究了极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质和电子分布的影响。
3.
The large conduction band offset leads to the short intersubband transition (ISBT) wavelength within the optical communication wavelength range.
大的导带偏移有利于在Al_xGa_(1-x)N/GaN量子阱中获得短波长的子带间跃迁,其跃迁波长可达光纤通信波段,大的LO声子能量和大的电子有效质量有利于获得超快的载流子弛豫机制。
4) band-to-band transition
带-带跃迁
5) Indirect Band Gap Transition
间接带隙跃迁
6) intersubband interwell transitions
子带阱间跃迁
补充资料：板带轧制压下规程(见板带轧制规程设计)
板带轧制压下规程(见板带轧制规程设计)
draughting schedule for plate and strip rolling
bandai zhazhi yaxia guieheng板带轧制压T规程(draughting，ehedule forplate and strip rolling)见板带札制规程设计。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条