1) transition through forbidden band
禁带跃迁
2) forbidden transition
禁戒(带)跃迁
3) spin-forbidden band
自旋禁戒跃迁带
4) forbidden transition
禁戒跃迁
1.
9174 ms by approaching method,and the absolute absorption cross section of RQ(5) ro-vibrational line of the(3,0) band in the triple forbidden transition b1∑g+–X3∑g-.
采用连续激光腔衰荡光谱技术,通过测量O2分子三重禁戒跃迁b1∑g+X3∑g-(3,0)带RQ(5)谱线(波数17266。
2.
For stronger forbidden transition line, two necessary conditions of theoretical calculation are metastable and enough small electron density.
讨论了禁戒跃迁出现较强谱线需要的两个条件,对满足上述条件的上层大气中的原子氧(OⅠ)和离子氧(OⅡ)的可见光波段禁戒线进行了详细的计算,并对应指出产生这些O(Ⅰ,Ⅱ)禁戒线的光化学反应。
3.
The energy intervals, spontaneous transition possibilities and oscillator strengths of forbidden transitions for Be like ions (Z=21～92) have been calculated by relativistic many configurations method with Breit correction, QED correction and nuclear effective volume correction.
根据全相对论多组态方法 ,采用GRASP2 程序 ,系统计算了类铍离子等电子序列 (Z =2 1～ 92 )禁戒跃迁(1s2 2 pnd) 1 (n=3～ 4) (1s2 2 p3-d )0 的能级间隔、自发跃迁系数和加权振子强度。
5) Forbbiden transition
禁阻跃迁
6) forbiddenness of a transition
跃迁禁戒
补充资料：宽禁带半导体(见半导体的能带结构)
宽禁带半导体(见半导体的能带结构)
wide gap semiconductor
习一’平叼能带结构。‘J~正J“、二二，，Conauctor见半
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条