1) Indirect Band Gap Transition
间接带隙跃迁
2) band-gap transition
带隙跃迁
4) sub-gap transition
亚带隙跃迁
5) indirect transition
间接跃迁
1.
The energy gaps E g and E′ g of the crystals which correspond to the direct transition and the indirect transition,respectively,and th.
计算了该晶体的直接跃迁能隙Eg、间接跃迁能隙E′g 和参与间接跃迁的声子能量 ,讨论了杂质Mg和Zn对光学吸收边性质的影响。
6) intersubband transition
子带间跃迁
1.
Influence of structure and doping concentration of Al_xGa_(1-x) N/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions;
Al_xGa_(1-x)N/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响
2.
The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions (ISBT) in Al_xGa_ 1-x N/GaN coupled double quantum wells (DQWs) is investigated by self-consistent calculation.
用自洽计算的方法研究了极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质和电子分布的影响。
3.
The large conduction band offset leads to the short intersubband transition (ISBT) wavelength within the optical communication wavelength range.
大的导带偏移有利于在Al_xGa_(1-x)N/GaN量子阱中获得短波长的子带间跃迁,其跃迁波长可达光纤通信波段,大的LO声子能量和大的电子有效质量有利于获得超快的载流子弛豫机制。
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条