1) homogeneity buffer layer
同质缓冲层
1.
The bilayer thin films use the low density thin films prepared at lower sputtering power as the buffer layer(homogeneity buffer layer).
采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3(PST)薄膜为缓冲层(同质缓冲层)的PST双层薄膜。
2) AZO homo-buffer layer
AZO同质缓冲层
3) Buffer layer
缓冲层
1.
Influence of buffer layers on the anisotropic magnetoresistance of NiCo films;
缓冲层对NiCo薄膜各向异性磁致电阻的影响
2.
Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer;
利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜
3.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
4) NiFe buffer layer
NiFe缓冲层
1.
NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.
采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。
5) buffer layers
缓冲层
1.
Fabrication of buffer layers and YBaCuO coated conductors by all chemical methods
全化学法制备缓冲层和YBaCuO超导涂层
2.
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆(YSZ)和钛酸锶(STO)两种薄膜缓冲层。
3.
2MnO_3 (110) film was shown when SrMnO3 (40 nm) buffer layers grown at 500 ℃.
当沉积温度为500℃时,在40nm缓冲层SrMnO3上,La0。
6) buffer
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缓冲层
1.
Growth of high Pyroelectric Ba_(0.65)Sr_(0.35)TiO_3 Films with Ba_(0.65)Sr_(0.35)RuO_3 Buffer;
利用Ba_(0.65)Sr_(0.35)RuO_3缓冲层制备高热释电系数的Ba_(0.65)Sr_(0.35)TiO_3薄膜
2.
GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer;
阳极氧化铝作缓冲层的Si基GaN生长
3.
Study on Conversion Characteristics of RSD with Structure of "Thin-base, Buffer and Transparent Anode";
“薄基区—缓冲层—透明阳极”RSD换流特性研究
补充资料：缓冲层
分子式：
CAS号：
性质：斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击，防止外层胶的龟裂直接抵达胎体帘布层，并承受轮胎在行驶时或突然停止时，由于惯性作用而产生的剪切应力。为此，它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。
CAS号：
性质：斜交轮胎胎面与胎体之间的胶布层或胶层。其主要作用是缓和外来冲击，防止外层胶的龟裂直接抵达胎体帘布层，并承受轮胎在行驶时或突然停止时，由于惯性作用而产生的剪切应力。为此，它应具有较好的导热性、耐老化性、多次变形下的耐疲劳性和低生热性及耐热性等。所用的帘线强度必须高于胎体帘线。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条