1) polysilicon
[,pɔli'silikən]
多晶硅
1.
An out-chip method for measuring fatigue property of polysilicon thin film;
多晶硅薄膜疲劳特性片外测试方法
2.
Solar cell and production of polysilicon;
太阳能电池及多晶硅的生产
2) polycrystalline silicon
多晶硅
1.
Large grain-sized polycrystalline silicon film obtained by SPC of a-Si: H film deposited by PCVD;
a-Si:H薄膜固相晶化法制备大晶粒多晶硅薄膜
2.
Status and development of photovoltaic industry and producing technology of polycrystalline silicon;
光伏产业和多晶硅技术现状与发展
3.
ESD protection devices on polycrystalline silicon;
ESD保护器件在多晶硅上的实现
3) multicrystalline silicon
多晶硅
1.
Phosphorous gettering of cast multicrystalline silicon wafers from different positions of the ingot;
铸造多晶硅硅片的磷吸杂研究
2.
on electrical properties of multicrystalline silicon prepared by metallurgic method was investigated.
利用四探针电阻测试仪、光学显微镜、扫描电镜、电感耦合等离子发射光谱仪、能谱分析等设备,从晶粒尺寸、组织形态以及晶界析出物等对冶金法制备的多晶硅电阻率的影响。
3.
It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.
对不同氧含量的太阳电池用多晶硅片进行了磷扩散吸杂,铝吸杂及磷铝联合吸杂的研究,用准稳态光电导衰减法(QSSPCD)和太阳电池效率测试系统测试了吸杂前后多晶硅片的少子寿命和IV曲线。
4) poly-Si
多晶硅
1.
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source;
大尺寸化学Ni源金属诱导晶化多晶硅的研究
2.
Reviewed is the recent progress in thin film solar cells including polycrystalline Si(poly-Si),amorphous Si(a-Si),CdTe and CuIn1-xGaxSe2(CIGS).
介绍了薄膜太阳电池在光伏技术中的地位,概述了包括多晶硅、非晶硅、CdTe、CuIn1-xGaxSe2(CIGS)在内的薄膜太阳电池的发展状况。
3.
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
5) poly-silicon
多晶硅
1.
Based on the dehydrogenation of a-Si∶H and the excimer laser annealing crystallization of a-Si thin films at various laser energy density, poly-silicon samples were obtained and characterized with XRD.
对氢化非晶硅(a-Si:H)进行了脱氢和不同能量密度的准分子激光晶化多晶硅的实验,对所得样品用X射线衍射表征。
2.
In this paper,a novel poly-silicon pressure sensor is designed,further more a CMOS fully depleted integrated circuit is used to change output signal into 0～+5V industrial signal.
本文提出了一种新型的高温压力传感器 ,采用多晶硅作为压敏电阻 ,同时采用新的工艺措施与全耗尽CMOS放大电路集成在一起 ,将输出电压转换为 0～ +5V的输出信号 。
3.
Due to the downscaling of device dimensions in CMOS technology,the metal gate electrodes will be required to replace conventional poly-silicon gate.
传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求,因此需要金属栅极材料来取代多晶硅。
6) multicrystal silicon
多晶硅
1.
Determination of eighteen trace elements in multicrystal silicon by inductively coupled plasma mass spectrometry
电感耦合等离子体质谱法测定多晶硅中18个痕量元素
2.
The production,consumption and market conditions of multicrystal silicon at home and abroad are introduced in details.
详细介绍了国内外多晶硅的生产、消费和市场状况,预测了其生产和消费发展前景,提出了发展建议。
补充资料：多晶硅
单质硅的一种形态。熔融的单质硅凝固时，硅原子以金刚石晶格排列成许多晶核，如这些晶核长成晶面取向不同的晶粒，则这些晶粒结合起来,结晶成多晶硅(见彩图)。多晶硅与单晶硅的差异主要表现在物理性质方面。例如，在力学性质、光学性质和热学性质的各向异性方面,远不如单晶硅明显；在电学性质方面,多晶硅晶体的导电性也远不如单晶硅显著，甚至于几乎没有导电性。在化学活性方面，两者的差异极小。多晶硅和单晶硅可从外观上加以区别，但真正的鉴别须通过分析测定晶体的晶面方向、导电类型和电阻率等。
由熔融的单质硅在过冷条件下自由结晶，可得多晶硅晶体。多晶硅可作拉制单晶硅的原料。
由熔融的单质硅在过冷条件下自由结晶，可得多晶硅晶体。多晶硅可作拉制单晶硅的原料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条