After raising the temperature of return stream to the tower, no thinning of pipeline wall had been found in 2006 inspection.

Several methods for plastically thinning the thin_wall pipes were introduced.

This article analyzes the thinning reason of pressure vessel shell after processed, the process procedure and process error's affection on shell's thinning, and presents specific measure to control the shell's thinning amount and compensate the thinning.

Stability of mixed phase silicon thin film material under light soaking;

Different structural silicon thin films deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were studied at the use of purifier or not.

Through scanning electronic microscopy(SEM) measurement,the morphologies of silicon thin film were investigated.

Fabrication and structure research of silicon films prepared by RF magnetron sputtering

The amorphous silicon films were prepared by atmospheric pressure chemical vapor deposition (APCVD) on a moving substrate from a gas mixture of silane and ethylene at 620℃ .

The study of making silicon film on trenched silicon substrate is done for the silicon MEMS movability parts, a efficacious method is gained for making silicon film on trenched silicon substrate, the film uniformity is±0.

By Raman spectroscopy, high resolution electron microscope and atomic force microscope, the structure of phosphorus doped hydrogenated nano crystalline silicon films (nc Si (P)∶H) was analyzed The films possess orderly arranged cluster feature in the size of 15～20?nm.

The effects of a showerhead electrode and longitudinal flow electrode on the growth of silicon films in a PECVD system are studied.

Silicon films have been prepared with silane (SiH_4) as the source gas by atmosphere pressure chemical vapor deposition (APCVD) on moving glass substrates under the conditions simulating technical process on float glass.