1) ultra-thin SiNx film
超薄氮化硅薄膜
2) silicon nitride film
氮化硅薄膜
1.
Microfabrication of silicon nitride film applied in microsensor;
微型传感器中氮化硅薄膜的微加工技术
2.
The structure and the property of amorphous silicon nitride film formed by direct current-plasma chemical vapour deposition (DC-PCVD) were analyzed.
对用直流等离子体化学气相沉积(DC—PCVD)法得到的非晶态氮化硅薄膜结构与性能进行了研究。
3.
0eV laser excitation, six luminescence emission bands of LPCVD silicon nitride film were observed corresponding to 2.
０ｅＶ的激光激发下，在室温下ＬＰＣＶＤ氮化硅薄膜可发射高强度可见荧光，其峰位位置分别为２。
3) silicon nitride thin film
氮化硅薄膜
1.
As a kind of mufti- functional materials, silicon nitride thin film is widely used in many fields.
氮化硅薄膜是一种多功能材料,在许多领域有着广泛的应用。
2.
In order to study preparation process and PL mechanism of silicon nitride thin films,the nc-Si(nanocrystalline Si)embedded in silicon nitride thin films were prepared by RF magnetron reaction sputtering technique and thermal annealing.
为研究氮化硅薄膜发光材料的制备工艺及其光致发光机制,实验采用射频磁控反应溅射技术与热退火处理制备了纳米硅镶嵌氮化硅薄膜材料。
3.
In the manufacture of microelectronic materials and devices, silicon nitride thin film is used as passivating film, insulation layer and diffusion mask.
氮化硅薄膜是一种多功能材料,在许多领域有着广泛的运用:在微电子材料及器件生产中,氮化硅作为钝化膜、绝缘层和扩散掩膜;硅基太阳能电池中,氮化硅用作钝化膜和减反射膜;在硅基发光材料中作为硅纳米团簇的包埋母体等等。
4) silicon nitride films
氮化硅薄膜
1.
Preparation Technologies of LPCVD Silicon Nitride Films;
LPCVD氮化硅薄膜的制备工艺
2.
The silicon nitride films with different Si rich degrees were prepared by plasma enhanced chemical vapor deposition (PECVD) technique at low temperature.
采用等离子体增强化学气相沉积方法(PECVD),在低衬底温度下制备了系列富硅量不同的富硅氮化硅薄膜,且所有样品分别经过不同温度的退火。
5) silicon nitride thin films
氮化硅薄膜
1.
The Internal Stress on silicon nitride thin films that were fabricated by PECVD are studied in this paper.
研究了等离子体增强化学气相沉积氮化硅薄膜的内应力。
6) silicon nitride
氮化硅薄膜
1.
The hydrogenated amorphous silicon nitride (a-SiN_x:H) thin films silicon nitride thin film has excellent physical and optical properties, and is widely used in optoelectronics, microelectronics, solar cell and so on, especially for the rapid development of the thin film transistor of TFT-LCD in the past 10 years.
1m的玻璃衬底制备薄膜晶体管液晶显示(TFT-LCD)用的氮化硅薄膜。
补充资料：氮化硅晶须补强氮化硅陶瓷复合材料
分子式：
CAS号：
性质：以氮化硅陶瓷为基体，以氮化硅晶须为增强体的复合材料。它具有高强度、高硬度、耐高温、抗蠕变、抗氧化、抗化学腐蚀、抗热冲击、耐磨等优良性能，是一种重要的高温结构陶瓷。使用温度可达1300℃，可用在陶瓷刀具、拔丝模、轴承、涡轮转子、耐热坩埚等方面。采用粉末冶金复合法制备。这一复合材料的界面难以控制，一般氮化硅晶须要通过涂层，才能保持在烧结过程中的稳定性。
CAS号：
性质：以氮化硅陶瓷为基体，以氮化硅晶须为增强体的复合材料。它具有高强度、高硬度、耐高温、抗蠕变、抗氧化、抗化学腐蚀、抗热冲击、耐磨等优良性能，是一种重要的高温结构陶瓷。使用温度可达1300℃，可用在陶瓷刀具、拔丝模、轴承、涡轮转子、耐热坩埚等方面。采用粉末冶金复合法制备。这一复合材料的界面难以控制，一般氮化硅晶须要通过涂层，才能保持在烧结过程中的稳定性。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条