1) BiCMOS high voltage technology
BiCMOS高压工艺
1.
8μm,dual well BiCMOS high voltage technology was used.
8μm,双阱BiCMOS高压工艺的高精度LDO线性稳压电路。
2) BiCMOS technology
BiCMOS工艺
1.
5μm one-polysilicon, double-metal N-well BiCMOS technology, hspice simulation shows that the overheating threshold is 150℃ and the thermal hysteresis threshold is 115℃, the maximum current is below 150μA.
5μm的P衬N阱数模混合1P2MBiCMOS工艺。
2.
A new thresholded neuron circuit by BiCMOS technology is proposed in this paper.
提出了一种新型的阈值神经元电路,它采用BiCMOS工艺实现,具有结构简单、集成度高、速度快等特点,能很好地实现神经元的基本运算功能,如“非”、“析取”、“合取”、“异或(XOR)”等。
3.
Circuits design with BiCMOS technology has not only the characteristics of CMOS circuits, but also some merits of bipolar technology, so it has found wide use.
BiCMOS工艺在电路设计方面既具备CMOS电路的特点,又兼备双极工艺的一些优点,因此得到了较为广泛的应用。
3) 1.2 μm BiCMOS process
1.2μm BiCMOS工艺
4) BiCMOS
BiCMOS工艺
1.
Design Optimization of SiGe/Si HBT Based on 1.5μm BiCMOS Technology;
基于1.5μm BiCMOS工艺的SiGe HBT器件设计优化
2.
Fabricated with a 2-μm BiCMOS technology, the D/A converter has a power dissipation of 500 mW.
0μmBiCMOS工艺制作。
3.
The latest development of BiCMOS process, complementary bipolar technology and SOI deep trench isolation technology are elaborated, with emphasis on BiCMOS technology.
介绍了模拟集成电路工艺的发展过程和现状,讨论了国内的BiCMOS工艺、互补双极工艺(CB)、和SOI双极工艺的最新进展。
5) BiCMOS Process
BiCMOS工艺
1.
6μm N-well BiCMOS process, simulation in HSPICE showed that, the design realized a CM range VCM reaching+7 V at a single supply voltage 2.
6μm的P衬N阱BiCMOS工艺制程,HSPICE仿真结果表明:电源电压为2。
2.
BICMOS process is studied and designed, which can fabricate bipolar transistor, CMOS transistor power transistor in the same die, and this process is characteristics of low power dissipation, high integration and strong drive.
本论文研究选取了BICMOS工艺,具有功耗低、集成度高、驱动能力强等优点。
3.
In this dissertation, first study on the basic principle of class D power amplifier and BiCMOS process.
6μm特征线宽、双层多晶、双层金属的多晶发射极BiCMOS工艺的D类功率放大器。
补充资料：高压法硝酸工艺
分子式：
CAS号：
性质：生产稀硝酸方法之一。氧化、吸收全过程均在0.71～1.2MPa压力下进行。特点：氨氧化炉铂网充填数多达20层左右，铂网消耗较大。氨氧化率为95％。
CAS号：
性质：生产稀硝酸方法之一。氧化、吸收全过程均在0.71～1.2MPa压力下进行。特点：氨氧化炉铂网充填数多达20层左右，铂网消耗较大。氨氧化率为95％。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条