1) second impact
二次碰撞
1.
To research the effect of chair distance of high-speed train on occupant injury,referring to the interior establishment and configurations of Chinese train,the second impact model on occupant injury in high-speed train crash accidents is established based on the European train standards on occupant injury simulation,experimentation and evaluation.
为研究高速列车座椅间距对乘员碰撞伤害的影响,在欧洲列车乘员伤害仿真、试验和评价标准的基础上,参考我国列车客室设施与布置,采用MADYMO Hybrid Ⅲ 50%假人,建立高速列车碰撞事故乘员二次碰撞仿真模型。
2.
Based on the interior arrangement of railway vehicle in China and the simulation through modeling of Madymo Hybrid Ⅲ 50% Dummy,the occupant injury caused by the second impact of railway crash is analyzed and compared with European and American standards.
结合我国铁道车辆客室设施与布置,参考欧洲和美国的轨道车辆乘员伤害仿真、试验和评价标准,采用Madymo HybridIII 50百分位假人对轨道列车碰撞事故中乘员二次碰撞的过程进行了计算机仿真和伤害分析,比较了不同客室布置方式、不同接触刚度、不同的座椅间距等对乘员伤害的影响。
2) secondary impact ionization
二次碰撞电离
1.
Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.
栅电流由四部分组成 :直接隧穿电流、沟道热空穴、一次碰撞电离产生的电子注入、二次碰撞电离产生的空穴注入 。
3) Electron exchan ge mechanism
单次碰撞
5) number of collisions
碰撞次数
补充资料：输出反馈(见线性二次型次优控制)
输出反馈(见线性二次型次优控制)
output feedback
3h日c卜口fon以以{输出反馈型次优控制。(output王eedbaek)见线性二次
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条