1) Deep Level
深能级中心
1.
These results indicate that the photoionization cross section technology based on PID control can measure precisely deep level photoioniz.
在分析GaN中深能级中心与入射光子间相互作用的基础上,提出了一种基于PID(proportional-integral-derivative)技术的深能级中心光离化截面的测试方法。
2) shallow level center
浅能级中心
1.
The experiments and theoretical analysis on the erasure process of the grating, light induced absorption and thermal activation demonstrated that there exists a shallow level center besides a deep level center in the Cu doped KNSBN crystal.
从光栅擦除特性、光致吸收和热激发能三方面的实验和理论分析 ,证明了掺铜KNSBN晶体中除了掺入的铜离子作为深能级中心外 ,还存在浅能级中心 ,并认为它是晶体生长过程形成的氧空位。
3) deep level
深能级
1.
The relation between GaAs substrate s deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect;
GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象
2.
Influence of deep level defects on electrical compensation in semi-insulating InP materials;
深能级缺陷对半绝缘InP材料电学补偿的影响
3.
Study of the luminance intensity on Zn-O deep level in GaP LEDs
GaP发光二极管中深能级对发光强度的影响研究
4) deep levels
深能级
1.
Highly deep levels in solid C_(70)/p-GaAs structures;
在C_(70)固体p-GaAs结构中的甚深深能级
2.
The 77K infrared photolnminescence experiment suggests that there are also a great deal of deep levels formed in the silicon crystal of the St:Er3+ samples in the anodization process, and it is difficult to reduce the deep levels using the annealing techniq.
样品低温红外光致发光实验证明：电化学过程同样在Ｓｉ：Ｅｒ３＋样品的硅基质晶体中引入了大量的深能级局域态，且这些局域态较难用退火方式进行控制。
3.
The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements.
在室温下通过对InAs/GaAs量子点存储器的延滞回线、偏压降温C-V等特性的实时测试,证明了其存储机理是由量子点层的深能级引起的,而并非是由量子点本征能级的充、放电所造成的。
5) Deep energy level
深能级
1.
In the light of quantum confinement model and the deep energy levels introduced by the impurities, it is concluded that the above-mentioned luminescence bands are related to the speci.
我们认为上述与杂质有关的发光带是由载流子在杂质深能级上复合所致 。
2.
In this paper,an acceptor` s deep energy level,about 0.
通过测量半磁性半导体Ｃｄ＿（１－ｘ）Ｍｎ＿ｘＴｅ晶体在７７～３００Ｋ温度范围的电导率变化，得到了晶体的一个受主深能级约为０。
6) deep bulk trap
体深能级
1.
A deep bulk trap level of SrTiO3 grain boundary barrier laper (GBBL) capacitor material was found to be at about 0.
本文用导纳谱法测得低温一次烧结SrTiO3晶界层电容器材料的体深能级位于导带底下0。
补充资料：热深厥深
热深厥深 热深厥深 病证名。指热厥证的征象。指邪热越深入，四肢厥冷的症状越严重，皆因阳气被遏，邪气内闭所致。属真热假寒证。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条