1) deep level defect
深能级缺陷
1.
We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photoluminescence.
文章作者利用深能级瞬态谱 (DLTS) ,正电子湮灭谱 (PAS)和光致荧光谱 (PL)等谱分析技术研究了六方碳化硅中具有电活性的深能级缺陷 。
2) defect energy level
缺陷能级
1.
When there is a vacancy in the SLS,defect energy level will form in the E_g.
由计算结果分析了GaN/AlN应变层超晶格中Ga,Al和N之间的成键情况及其带隙Eg随超晶格层数n的变化趋势;当超晶格中存在空位时,带隙中将形成缺陷能级。
3) defect levels
缺陷能级
1.
The defect levels in Hg 1 x Cd x Te( x =0.
６）ｎ＋－ｏｎ－ｐ结中的深能级缺陷，得到其缺陷能级位置在价带上０。
4) deep level trap
深能级陷阱
1.
Both positive and negative frequency dispersions of transconductance are simualted and analyzed with deep level traps located at the channel/buffer interface.
对沟道缓冲层界面深能级陷阱的分析表明,4H-SiC MESFET的跨导既有正向偏移,也有负向偏移。
5) trap level effect
缺陷能级影响
6) defect depth
缺陷深度
1.
Measurement of defect depth by infrared thermal wave nondestructive evaluation based on pulsed phase;
基于脉冲位相的红外热波无损检测法测量缺陷深度
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条