This paper analyses a model of effect of EL2 level of GaAs MESFETs pinch-off voltage, find out that the level under the intrinsic Feimi levels are the major factors which effect the GaAs MESFETs pinch-off voltage, relation between the levels density and the effect factor(γ) is linear.

The relation between GaAs substrate s deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect;

Influence of deep level defects on electrical compensation in semi-insulating InP materials;

Study of the luminance intensity on Zn-O deep level in GaP LEDs

Highly deep levels in solid C_(70)/p-GaAs structures;

The 77K infrared photolnminescence experiment suggests that there are also a great deal of deep levels formed in the silicon crystal of the St:Er3+ samples in the anodization process, and it is difficult to reduce the deep levels using the annealing techniq.

The memory effect is due to the deep levels induced by the QD layer,and rather than the charging and discharging of intrinsic energy levels in QDs,which is demonstrated by the hysteresis,real-time and bias-cooling C-V measurements.

In the light of quantum confinement model and the deep energy levels introduced by the impurities, it is concluded that the above-mentioned luminescence bands are related to the speci.

In this paper,an acceptor` s deep energy level,about 0.