真空化,vacuum,在线英语词典,英文翻译,专业英语

1) vacuum

真空化

This paper introduces the problems existing in ground 35 kV tranformer substation and expounds the vacuum alteration plan for 6 kV old high pressure switch cabinet It has made good economic benefi

介绍了地面 35kV变电所老式开关柜存在的问题 ,阐述了 6kV老式高压开关柜真空化改造的方案 ,并收到了良好的经济效益。

2) Vacuum chemistry

真空化学

3) theory vacuumization

理论真空化

While in the past 20 years,geography in higher educa ti on of our country has witnessed marked development, there are many problems such as theory vacuumization of the subject, weakened basis, desalination of geograp hical features, the lagging development of this subject behind social economic d evelopment, confusing teaching system, shortage of teachers, students of poor qu ality, etc.

但同时也出现了一些影响学科长远发展、令人堪忧的问题 :学科理论真空化 ;基础削弱、地理特色淡化 ;学科发展滞后于社会、经济发展 ;教学体系紊乱 ;师资力量减弱 ;学生质量下降。

4) chemical vapor deposition

真空化学气相沉积

By the chemical vapor deposition of difluoro-[2.

2]对环番为原料,通过真空化学气相沉积合成了一种高分子聚合物薄膜,并对该高分子薄膜材料的一些性能进行了探讨。

5) UHV/CVD

超高真空化学气相淀积

Ge_xSi_(1-x) crystal was grown by ultrahigh vacuum chemical vapor deposition (UHV/CVD) at 650℃, results showed that O_2 and/or H_2O caused the surface of the grown materials irregular in the growth process.

利用超高真空化学气相淀积（ＵＨＶ／ＣＶＤ）系统在６５０℃生长出表面光亮的ＧｅＳｉ单晶在１２００Ｌ／ｍｉｎ分子泵与前级机械系间串接４５０Ｌ／ｍｉｎ分子泵，改善了生长环境串接分子泵后生长的样品的Ｘ射线双晶衍射分析表明，外延层衍射峰半宽仅为１９８ａｒｃｓｅｃ，且出现了Ｐｅｎｄｅｌｌｏｓｕｎｇ干涉条纹，说明外延层结晶质量很好。

In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods.

文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究;并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。

Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).

用超高真空化学气相淀积系统在Si(1 0 0 )衬底上生长了多层Ge量子点。

6) UHV-CVD

超高真空化学气相沉积

According to the delay in nucleation of SiGe on SiO_2 surface at low temperature,an ultrahigh vacuum chemical vapor deposition(UHV-CVD)technique was adopted.

利用低温下锗硅材料在二氧化硅表面成核需要一定时间的特点,采用超高真空化学气相沉积(UHV-CVD)技术,550℃下,在硅光刻窗口处,选择性生长了锗硅外延层。

参考词条

改进神经网络多媒体设计

补充资料：公理化方法(见公理化和形式化)

公理化方法(见公理化和形式化)
axiomatical method

　　gongllbuafangfa公理化方法化和形式化。(axiomatieal method)见公理
　　

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

首页 \| 翻译 \| 影视 \| 论坛 \| 索引超高真空/化学气相沉积超高真空化学汽相淀积高真空化学气相外延

1) vacuum 真空化 1. This paper introduces the problems existing in ground 35 kV tranformer substation and expounds the vacuum alteration plan for 6 kV old high pressure switch cabinet It has made good economic benefi 介绍了地面 35kV变电所老式开关柜存在的问题 ,阐述了 6kV老式高压开关柜真空化改造的方案 ,并收到了良好的经济效益。 2) Vacuum chemistry 真空化学 3) theory vacuumization 理论真空化 1. While in the past 20 years,geography in higher educa ti on of our country has witnessed marked development, there are many problems such as theory vacuumization of the subject, weakened basis, desalination of geograp hical features, the lagging development of this subject behind social economic d evelopment, confusing teaching system, shortage of teachers, students of poor qu ality, etc. 但同时也出现了一些影响学科长远发展、令人堪忧的问题 :学科理论真空化 ;基础削弱、地理特色淡化 ;学科发展滞后于社会、经济发展 ;教学体系紊乱 ;师资力量减弱 ;学生质量下降。 4) chemical vapor deposition 真空化学气相沉积 1. By the chemical vapor deposition of difluoro-[2. 2]对环番为原料,通过真空化学气相沉积合成了一种高分子聚合物薄膜,并对该高分子薄膜材料的一些性能进行了探讨。 5) UHV/CVD 超高真空化学气相淀积 1. Ge_xSi_(1-x) crystal was grown by ultrahigh vacuum chemical vapor deposition (UHV/CVD) at 650℃, results showed that O_2 and/or H_2O caused the surface of the grown materials irregular in the growth process. 利用超高真空化学气相淀积（ＵＨＶ／ＣＶＤ）系统在６５０℃生长出表面光亮的ＧｅＳｉ单晶在１２００Ｌ／ｍｉｎ分子泵与前级机械系间串接４５０Ｌ／ｍｉｎ分子泵，改善了生长环境串接分子泵后生长的样品的Ｘ射线双晶衍射分析表明，外延层衍射峰半宽仅为１９８ａｒｃｓｅｃ，且出现了Ｐｅｎｄｅｌｌｏｓｕｎｇ干涉条纹，说明外延层结晶质量很好。 2. In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究;并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。 3. Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD). 用超高真空化学气相淀积系统在Si(1 0 0 )衬底上生长了多层Ge量子点。 6) UHV-CVD 超高真空化学气相沉积 1. According to the delay in nucleation of SiGe on SiO_2 surface at low temperature,an ultrahigh vacuum chemical vapor deposition(UHV-CVD)technique was adopted. 利用低温下锗硅材料在二氧化硅表面成核需要一定时间的特点,采用超高真空化学气相沉积(UHV-CVD)技术,550℃下,在硅光刻窗口处,选择性生长了锗硅外延层。参考词条改进神经网络多媒体设计补充资料：公理化方法(见公理化和形式化) 公理化方法(见公理化和形式化) axiomatical method 　　gongllbuafangfa公理化方法化和形式化。(axiomatieal method)见公理　　说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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