1) CMR effects
大磁阻效应
2) colossal magnetoresistance effect
超大磁阻效应
3) colossal magnetoresistance
超大磁电阻效应
1.
Since the discovery of colossal magnetoresistance effect (CMR) in perovskite manganites, it has sparked considerable renewed interests in these long-known materials with an eye towards both an understanding of the CMR and related properties and potential applications in magnetic information store and low-field magnetic sensors.
以钙钛矿结构氧化物为代表的巨磁电阻材料,由于它们所表现出来的超大磁电阻效应(Colossal Magnetoresistance)在提高磁存储密度及磁敏感探测元件上具有十分广阔的应用前景,因而受到人们的广泛关注。
2.
Recently, since the discovery of colossal magnetoresistance effect (CMR) in perovskite manganites, it has sparked considerable renewed interests in these long-known materials with an eye towards both an understanding of the CMR and related properties and potential applications in magnetic information store and low-field magnetic sensors.
近年来，以钙钛矿结构氧化物为代表的巨磁电阻材料，由于它们所表现出来的超大磁电阻效应(Colossal Magnetoresistance)在提高磁存储密度及磁敏感探测元件上具有十分广阔的应用前景，因而受到人们的广泛关注。
3.
Since the discovery of colossal magnetoresistance effect (CMR) in per-ovskite manganites, it has sparked considerable renewed interests in these long-known materials with an eye towards both an understanding of the CMR and related properties and potential applications in magnetic information store and low-field magnetic sensors.
以钙钛矿结构氧化物为代表的巨磁电阻材料，由于它们所表现出来的超大磁电阻效应(Colossal Magnetoresistance)在提高磁存储密度及磁敏感探测元件上具有十分广阔的应用前景，因而受到人们的广泛关注。
4) magnetoresistance effect
磁阻效应
1.
This paper introduces the principles of several magnetoresistance effects in details.
对几种磁阻效应作用机理和磁阻元件在传感器中的应用进行了综述,详细介绍了几种磁阻传感器的工作原理,对几类常用的磁阻传感器的性能进行了比较,并对磁阻传感器的发展进行了展望。
2.
It is shown that there exists a significant transmission difference for electrons through parallel and antiparallel magnetization configurations,which leads to a considerable magnetoresistance effect.
由于电子通过器件的平行和反平行磁化构型的透射几率显著不同,因而该器件拥有相当的磁阻效应。
3.
Using the divalence element Sr to replace the position of La in LaMnO 3 materials, La 1-x Sr x MnO 3 materials has been successfully prepared with excellent single phase and distorted perovskite structure and magnetoresistance effect.
利用二价金属元素Ｓｒ 对ＬａＭ ｎＯ３ 材料进行了Ｌａ 位替代，成功地制备了单相性好、具有扭曲钙钛矿结构和磁阻效应的Ｌａ１－ ｘ Ｓｒｘ Ｍ ｎＯ３ 材料。
5) magnetoresistive effect
磁阻效应
1.
Magnetoresistive effect of semiconducting diamond films;
半导体金刚石膜的磁阻效应
补充资料：变磁阻式传感器
将位移、转速、加速度等非电物理量转换为磁阻变化的传感器。它包括电感式传感器、变压器式传感器和电涡流式传感器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条