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1)  Bi_4Ti_3O_12 and A/B site doping
Bi4Ti3O12及A/B位掺杂
2)  Bi_4Ti_3O_(12) additives
Bi4Ti3O12掺杂
3)  B site doping
B位掺杂
1.
Focus on describing the situation of A an B site doping to Bi4Ti3O12 and the improvement of them to the ferroelectric and fatigue properties.
分析了对铁电薄膜Bi4Ti3O12进行A位、B位掺杂时,Bi4Ti3O12铁电性及疲劳特性的改善及相应的理论解释,并指出Bi4Ti3O12值得进一步深入研究的领域。
4)  B-site doping
B位掺杂
1.
The effect of B-site doping with different ion sizes and valences on the remnant polarization and fatigue endurance was investigated to clarify the mechanism of B-site doping.
制备了不同半径和价数的离子B位掺杂的BTNb,BTV,BTZr,BTHf陶瓷,并且对其性能进行了测量。
5)  B-doping
B掺杂
1.
Theoretic Calculation on the Electronic Structures of Sr_2MgSi_2O_7 by B-doping;
B掺杂Sr_2MgSi_2O_7电子结构的理论计算
2.
XRD spectra and SEM photos indicate that B-doping plays a great role on the microstructure of ZnO films.
研究了利用LPMOCVD技术制备的不同B掺杂浓度对ZnO薄膜的微观结构和光电特性影响。
6)  B-doped
B掺杂
1.
Large Area Deposition of B-doped CVD Diamond Film;
大面积B掺杂CVD金刚石膜的制备研究
2.
Used hydrothermal method to synthesis B-doped nano-TiO_2 with visible light response,and B atoms existed as B-O-Ti.
采用水热法合成了具有可见光响应的B掺杂纳米TiO_2,其中B以B-O-Ti的结构存在。
补充资料:bismuth germanium oxide (bi4ge3o12)
CAS:12233-56-6
分子式:Bi4Ge3O12
分子质量:1245.68

中文名称:锗酸铋

英文名称:bismuth germanium oxide;bismuth germanium oxide (bi4ge3o12);bismuth germanate
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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