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1)  LTCVD
低温气相化学沉积
1.
A silicalite 1 zeolite membrane was in situ crystallized from a layer of silica species prepared by a novel method of low temperature chemical vapor deposition (LTCVD) on a porous cordierite substrate.
本文在制备沸石膜的过程中采用新颖的低温气相化学沉积 (LTCVD)法引入合成所需的硅源 。
2)  low temperature chemical vapor deposition
低温化学气相沉积
3)  Low Temperature plasma enhance chemical vapour deposition
低温等离子增强化学气相沉积
4)  vapor deposition thin films at low temperature
低温气相沉积
1.
The vapor deposition thin films at low temperature have good process performance and tribological characteristics.
工艺性能良好、摩擦学特性满足工程应用实际需求的低温气相沉积工艺的研究,为低温回火材料及聚合物等温度敏感材料零部件的表面改性提供了一种新的和有效的技术解决方案,对于开发无污染环保型表面改性处理技术意义重大。
5)  low pressure chemical vapor deposition
低压化学气相沉积
1.
Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate by low pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.
以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
6)  low-pressure chemical vapor deposition
低压化学气相沉积
1.
Synthesize single-wall carbon namotubes by low-pressure chemical vapor deposition method;
低压化学气相沉积法制备单壁碳纳米管
2.
We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.
研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
3.
In this paper,we use low-pressure chemical vapor deposition system to synthesize highly vertically aligned CNTs and non-aligned CNTs respectively,and apply them successfully in super-capacitors,field-emission cathode,as well as biological sensors.
本论文利用低压化学气相沉积系统,分别以酞菁铁和乙炔为碳源制备出了高度定向与非定向的多壁碳纳米管,并将其成功应用于超级电容器和场发射阴极以及生物传感器中,在碳纳米管的应用方面作了初步的尝试。
补充资料:等离子化学气相沉积
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性质:PCVD  化学气相沉积(CVD)法是制备无机材料,尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD,可在较低的温度下沉积,涂层均匀不剥落。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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