1) breakdown voltage
压敏电压
1.
The result showed that burying sintering process may make breakdown voltage smaller and apparen.
结果表明,采取粉料埋烧可以明显降低压敏电压、提高介电常数。
2.
The results show that the sample doped with Ta2O5 exhibits the lowest breakdown voltage(E10mA = 5.
结果发现,Ta2O5掺杂的样品具有最低的压敏电压(E10mA=5。
3.
Based on the results of measurements of resistance-frequency,electric capacity-frequency and electric current-voltage,The electrical properties such as breakdown voltage,electric capacity and the semi-conductivity of the samples were investigated.
3时,压敏电压最低(E10mA为8V。
2) varistor voltage
压敏电压
1.
5% ,the grain size will be enlarged and the varistor voltage V1 mA will be decreased with little change of nonlinear coefficient a.
结果表明:TiO2的掺入能显著促进晶粒生长,降低压敏电压V1mA,但掺入量超过一定值后一方面会生成阻止晶粒继续生长的晶界反应层,促使压敏电压又有所升高,另一方面会生成钛酸铋立方相而引起富铋晶界相含量的减少,导致非线性特性下降。
2.
1％ (in mole content), the nonlinearity and the varistor voltage V_(1mA) will be increased.
1％能提高ZnO压敏陶瓷的非线性和压敏电压;但当其添加量大于0。
3.
54 and varistor voltage of 20.
经200℃退火热处理后,多层ZnO薄膜的非线性系数达到61·54,压敏电压20·10V。
3) nonlinear voltage (V 1mA)
压敏电压(V1mA)
4) varistor
[və'ristə]
压敏电阻
1.
Progress in study on nonlinear electrical transporting theory of varistor;
压敏电阻非线性电输运理论研究进展
2.
Effect of nano-sized TiO_2 doping on ZnO varistor;
纳米TiO_对ZnO压敏电阻的影响
3.
Preparation of doped ZnO nano-powders and ZnO varistors by different methods;
不同方法合成掺杂ZnO粉体制备ZnO压敏电阻
5) varistors
压敏电阻
1.
Then ZnO varistors were prepared at different sintering temperatures.
以金属离子盐和草酸为原料,采用室温固相化学反应合成掺杂ZnO前驱物,根据DSC-TG分析结果,将其在450℃热分解2 h,得到掺杂ZnO粉体,并用此粉体制备了片式ZnO压敏电阻。
2.
Using zinc nitrate, urea and additives as raw materials, doped ZnO nanopowders for varistors were prepared by the self-propagating combustion method.
以硝酸锌、尿素以及其它添加剂为原料,通过自蔓延燃烧法一次性合成了ZnO压敏电阻用掺杂纳米粉体。
3.
The research progress of Microwave-sintered Zinc oxide varistors was reviewed.
但压敏电阻组分较多,微波快速烧结时,组分通过扩散和迁移在微观上均匀分布较难,可能对电性能有一定影响。
6) capacitor-varistor
电容-压敏
1.
In this paper the preparation methods and mechanism of multifunction of Sr-TiO3-based capacitor-varistor multifunctional ceramic are introduced.
介绍了SrTiO_3系电容-压敏复合功能陶瓷的制备方法及其复合功能效应的机理,综述了当前有关研究的进展,评述了晶粒特性和晶界特性对复合功能效应的影响。
补充资料：电压敏效应
分子式：
CAS号：
性质：又称电压敏效应。某些半导体材料的电阻值对外加电压敏感的现象。是由半导体材料的晶界效应引起的。具有非线性伏安特性。这类半导体材料的主晶相主要有氧化锌、碳化硅、钛酸锶、硅、锗、硒化镉和硒等。通常按压敏电压可分为高压、中压和低压三类压敏电阻器。在浪涌吸收、高压稳压，超导移能、无间隙避雷器等方面已获得广泛应用。
CAS号：
性质：又称电压敏效应。某些半导体材料的电阻值对外加电压敏感的现象。是由半导体材料的晶界效应引起的。具有非线性伏安特性。这类半导体材料的主晶相主要有氧化锌、碳化硅、钛酸锶、硅、锗、硒化镉和硒等。通常按压敏电压可分为高压、中压和低压三类压敏电阻器。在浪涌吸收、高压稳压，超导移能、无间隙避雷器等方面已获得广泛应用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条