1) Coulomb blockade and electron tunneling
Coulomb阻塞及电子隧穿
2) tunneling resistance
隧穿电阻
1.
Quantum calculations of tunneling resistance in single electron transistors;
单电子晶体管隧穿电阻的量子计算
3) tunnelling electrons
隧穿电子
5) tunneling magnetoresistance
隧穿磁电阻
1.
The MTJs with tunneling magnetoresistance (TMR) ratio of 30%—48% can be directly obtained for the structure of Ta(5 nm)/Cu(25 nm)/Ni_ 79Fe_ 21(.
采用4nm厚的Co75Fe25为铁磁电极和1·0或0·8nm厚的铝氧化物为势垒膜,直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5nm)/Cu(25nm)/Ni79Fe21(5nm)/Ir22Mn78(10nm)/Co75Fe25(4nm)/Al(0·8nm)-O/Co75Fe25(4nm)/Ni79Fe21(20nm)/Ta(5nm)。
2.
The typical values of junction resistance_area product and tunneling magnetoresistance (TMR) ratio of the MTJs are 16 kΩμm 2 and 18% respectively.
利用现有的光刻设备和工艺条件在 4英寸热氧化硅衬底上直接制备出的磁性隧道结 ,其结电阻与面积的积矢的绝对误差在 10 %以内 ,隧穿磁电阻的绝对误差在 7%以内 ,样品的磁性隧道结性质具有较好的均匀性和一致性 ,可以满足研制磁随机存储器存储单元演示器件的基本要
3.
For example, the MTJs of Co/Al 2O 3/Co with a tunneling magnetoresistance (TMR) ratio of 17 2%, the junction resistance of .
例如 :利用狭缝宽度为 1 0 0 μm的金属掩模 ,直接制备出室温隧穿磁电阻比值为 1 7 2 %的磁性隧道结Co Al2 O3 Co,其结电阻为 76Ω ,结电阻和结面积的积矢为 76× 1 0 4 Ωμm2 ,自由层的偏转场为 1 1 1 4A m ,并且在外加磁场 0— 1 1 1 4A·m- 1 之间时室温磁电阻比值从零跳跃增加到 1 7 2 % ,磁场灵敏度达到 0 1 % (1 0 3A·m- 1 ) 。
6) tunnel magnetoresistance
隧穿磁电阻
1.
Based on the twoband model,we investigate the tunnel magnetoresistance(TMR) in ferromagentic tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field.
在两带模型的基础上,计算了外电场下有限厚铁磁层隧道结中的隧穿磁电阻(TMR)。
2.
The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance(TMR) and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer.
讨论了隧穿磁电阻(TMR)、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系。
补充资料:门隧
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