1) bonding interface
键合面
2) Relative bonded area(RBA)
相对键合面积（RBA）
3) bonding
键合
1.
A strategy of wafer-level-plastic-packaging for MEMS based on adhesive bonding;
基于粘附剂键合的圆片级MEMS塑料封装技术
2.
Electrostatic-alloy bonding technique used in MEMS;
MEMS中的静电-热键合技术
3.
Application of laser fusing bonding of silicon/glass in a novel uncooled infrared detector;
激光熔融键合在新型室温红外探测器的应用
4) Binding
键合
1.
Studies on Photosensitive Dyes Binding to Monocrystalline Germanium Surface;
单晶锗表面键合光敏染料的研究
2.
Binding of Ionic Derivative of Pyrene to Strong Polyelectrolyte;
强聚电解质对离子型芘衍生物探针的键合
3.
Studies of photosensitive dyes binding to monocrystalline germanium surface;
单晶锗表面键合光敏染料及其电流-电压曲线的测定
5) bond
键合
1.
The defect distribution of bonded wafers and its relationship to the Weibull modulus;
硅片键合界面缺陷分布与Weibull模数的关系
2.
Study on a New Al-1%Si Bonding Wire for Encapsulation of Integrate Circuit;
集成电路封装用新型Al-1%Si键合线的研制
3.
3 mm) was bonded directly on an aluminum nitride substrate by heating.
通过高温热氧化的方法 ,在AlN陶瓷表面形成一薄层Al2 O3作为过渡层 ,成功地将铜与AlN陶瓷键合在一起 ,研制出性能优越的AlN陶瓷覆铜基板 。
6) wafer bonding
键合
1.
<Abstrcat> Some measurement methods of wafer bonding strength were summarized.
对现有的几种硅片键合强度测试方法进行总结,在裂纹传播扩散法测试机理分析的基础上,提出了测试系统需要得到的参数和功能。
2.
Interfacial thermal stresses distribution and value in InP/Si wafer bonding are investigated both theoretically and experementally.
通过实验和理论计算,分析了InP/Si键合过程中,界面热应力的分布情况、影响键合结果的关键应力因素及退火温度的允许范围。
3.
Thermal stress distribution in wafer bonding of InP/GaAs after annealing is investigated by combining finite element method(FEM) with the ANSYS program.
用有限元方法结合ANSYS工具,研究了InP/GaAs键合在退火后的热应力分布图像。
参考词条
补充资料：合面
1.合仆，面朝下。 2.反面;背面。 3.对面。 4.整个一面。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。