1) Mid frequency reactive sputtering
中频反应溅射
2) medium frequency reactive magnetron sputtering
中频反应磁控溅射
1.
Effect of Ce~(3+)concentration on luminescent properties of Al_2O_3:Ce~(3+)films by medium frequency reactive magnetron sputtering;
掺杂浓度对中频反应磁控溅射制备Al_2O_3：Ce~(3+)薄膜发光性能的影响
3) medium frequency magnetron reaction sputtering
中频磁控反应溅射
1.
AlN thin films were successfully deposited on Si(111)substrates by medium frequency magnetron reaction sputtering,which were in Ar and N2 mixtures with high pure Al target.
利用中频磁控反应溅射技术,以高纯Al为靶材、高纯N2为反应气体,在Si(111)衬底上成功制备出氮化铝薄膜。
4) mid-frequency alternative reactive magnetron sputtering
中频交流反应磁控溅射
1.
N-doped TiO2 films were prepared by mid-frequency alternative reactive magnetron sputtering.
用中频交流反应磁控溅射方法制备了N掺杂的TiO2薄膜。
5) MF reactive dual magnetron sputtering
中频双靶反应磁控溅射
6) Mid-frequency direct current magnetron sputtering
中频直流反应磁控溅射
补充资料：三级反应溅射
分子式：
分子量：
CAS号：
性质：见阴极溅射。
分子量：
CAS号：
性质：见阴极溅射。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条