1) RF reaction sputtering
射频反应溅射法
1.
Gas sensing characteristics of SnO_(2-x) films deposited by RF reaction sputtering
射频反应溅射法制备SnO_(2-x)纳米薄膜的气敏特性研究
2) reactive radio frequency sputtering
射频反应溅射
1.
Amorphous Al2O3 dielectric films have been fabricated by reactive radio frequency sputtering method.
利用射频反应溅射方法制备了Al2O3非晶薄膜,用椭圆偏振仪获得了薄膜的厚度,用高频C-V和变频C-V及J-V测量了薄膜的电学特性,用X射线以衍射(XRD)检测了薄膜的结构,用原子力显微镜(AFM)观察了薄膜的表面形貌。
3) RF reactive sputtering
射频反应溅射
1.
The TaO x films with thickness greater than 200nm have been made on the substrate of WO 3/ITO/Glass by rf reactive sputtering processes with various oxygen contents.
利用射频反应溅射沉积方法在不同氧含量下以ＷＯ３／ＩＴＯ／Ｇｌａｓｓ为基体，制备了一系列厚度大于２００ｎｍ的ＴａＯｘ薄膜，并用Ａｒｎｏｌｄｕｓｓｅｎ方法检测离子导电性能。
2.
The influence of reactive gas (O2) content and substrate temperature on the RF reactive sputtering deposited rate and optical characteristics for the SiO2 film was studied.
研究反应气体（Ｏ_２）含量及基片温度对射频反应溅射ＳｉＯ_２膜光学性能及沉积速率的影响，并给出了膜层俄歇能谱分析结果。
3.
Titanium nitride film has been grown on glass substrate by RF reactive sputtering with a mixture of high purity argon and nitrogen used as sputtering and reactive gases,respectively.
用射频反应溅射的方法制备了 TiN 薄膜,其晶体结构与电阻率都与溅射气氛中 N_2分量有直接关系。
4) RF reactive co-sputtering
射频反应共溅射
1.
Indium-doped zinc oxide films of various contents of In were deposited on silicon substrates by RF reactive co-sputtering.
通过射频反应共溅射法在硅衬底上制备了不同In掺杂量的ZnO薄膜,表征了薄膜的结构和表面形貌,研究了In掺杂量对znO薄膜的结构特性的影响。
5) RF reactive sputter
射频(RF)反应溅射
6) radio-frequency reactive sputtering
射频反应溅射
1.
Transparent and conductive oxides CdIn 2O 4 thin films were prepared by radio-frequency reactive sputtering from a Cd-In alloy target in Ar+O 2 atmosphere.
在Ar +O2 气氛中 ,采用射频反应溅射Cd In靶制备CdIn2 O4 薄膜 。
补充资料：射频
射频
物理学术语。介于声波和红外线之间的波的频率。用于MR研究的射频常在兆赫兹(MHz)范围内。磁共振成像中，必须使用射频脉冲选择性激励特定层面的质子，以产生MR信号。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条