1)  band gap
能隙结构
2)  Energy gap
能隙
1.
A DFT study on structure,energy gap and spectrum property of the conjugated polymer poly(2,5-furylene vinylene);
2,5-呋喃乙烯撑齐聚物(n=1~x)的结构能隙与光谱性质的理论研究
2.
The determining method for energy gap and energy-band parameters of conducting polymers;
导电聚合物发光材料能隙和能带参数的确定方法
3.
Study on specific heat and two energy gaps of MgB_2 samplesprepared by ambient pressure and high pressure;
常压和高压合成MgB_2的低温比热及两个超导能隙研究
3)  Band gap
能隙
1.
PAS is a semiconductor material with quite small band gap and good pristine electric conductivity.
从聚并苯的能带结构可以得出:聚并苯是有较小能隙、良好本征导电性能的半导体材料,考虑链间作用,对能带结构特征未有大的改变,能隙等值略有修正,导电能力有所加强。
2.
7, which showed different band gap values.
7能带结构的研究仅限于实验上,而且不同实验测量的能隙值不同。
3.
The results indicate that, with compressibility increasing , the width of band gap becomes wider,and that the interaction between Fe d electrons and S p electrons is stronger,and length of Fe-S bond becomes shorter.
计算结果表明 :随着压缩度的增加 ,外压调制下的Fe—S键长缩短 ,FeS2 小的能隙变宽 ,Fe的d电子与S的 p电子杂化增强 ,原子间相互作用增大。
4)  Bandgap
能隙
1.
A Precise CMOS Bandgap Voltage Reference;
一种高精度CMOS能隙基准电压源
2.
A new low-voltage bandgap voltage reference was presented.
介绍了一种新型能隙基准电压源电路,此电路在smic0。
3.
Based upon analysis of several type s of bandgap voltage reference circuit, we demonstrate a high precision circuit of bandgap voltage reference with relatively simple structure for high-speed se rial link.
在分析了几种基准电压源的基础上 ,设计并实现了一种高精度用于高速串行通信接口的 CMOS能隙基准电压电路。
5)  superconducting energy gap
超导能隙
1.
The results show that the superconducting energy gap (2?(T)) is about 80 meV at Tc (93 K), and decreases smoothly as the temperature increasing.
计算结果表明,其超导能隙值2?(T)在101meV量级;并在超导临界温度点(Tc=93K)附近,有超导能隙不为零的极小值;当温度超过Tc时,YBa2Cu3O7有赝能隙存在,且赝能隙随温度升高至T*=120K时,达到极大值;当温度超过T*时,赝能隙又有明显减小趋势。
2.
The conclusion was that superconducting energy gap could not be obtained by measuring the emergence work of the metal.
指出 :不能通过测量金属的脱出功来测量超导能
6)  pseudogap
赝能隙
1.
Anomalies in transport properties due to the normal-state pseudogap in doped YBa_2(Cu_(1-x) M_x) 3O_(7-δ) (M =Co,Zn) thin films;
赝能隙导致的YBa_2(Cu_(1-x)M_x)_3O_(7-δ)(M=Co,Zn)薄膜的输运性质异常
2.
It reaches the minimum at Tc and exhibits pseudogap above Tc.
计算结果表明,其超导能隙值2?(T)在101meV量级;并在超导临界温度点(Tc=93K)附近,有超导能隙不为零的极小值;当温度超过Tc时,YBa2Cu3O7有赝能隙存在,且赝能隙随温度升高至T*=120K时,达到极大值;当温度超过T*时,赝能隙又有明显减小趋势。
3.
This article reviews insights on high-T_c superconductors from the nuclear magnetic resonance (NMR) technique, with emphasis on local hole density, d-wave superconducting gap and its consequences, and the nature of the pseudogap.
本文回顾了用核磁共振技术研究高温超导体的进展,着重介绍局域电荷分布,超导态性质以及赝能隙性质。
参考词条
补充资料:间接带隙(见半导体的能带结构)


间接带隙(见半导体的能带结构)
indirect band gap

  I’ed接带隙indireet band gap见半导体的能带结构。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。