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1)  Haldane gap
Haldane能隙
1.
Numerical results of the Haldane gap as a function of external magnetic field concerned are presented and compared with experiment results via electron-spin-resonance technique and other theories.
在自洽平均场的理论基础上,讨论了S=1Heisenberg反铁磁链Haldane能隙对外场的依赖特性。
2)  Energy gap
能隙
1.
A DFT study on structure,energy gap and spectrum property of the conjugated polymer poly(2,5-furylene vinylene);
2,5-呋喃乙烯撑齐聚物(n=1~x)的结构能隙与光谱性质的理论研究
2.
The determining method for energy gap and energy-band parameters of conducting polymers;
导电聚合物发光材料能隙和能带参数的确定方法
3.
Study on specific heat and two energy gaps of MgB_2 samplesprepared by ambient pressure and high pressure;
常压和高压合成MgB_2的低温比热及两个超导能隙研究
3)  Band gap
能隙
1.
PAS is a semiconductor material with quite small band gap and good pristine electric conductivity.
从聚并苯的能带结构可以得出:聚并苯是有较小能隙、良好本征导电性能的半导体材料,考虑链间作用,对能带结构特征未有大的改变,能隙等值略有修正,导电能力有所加强。
2.
7, which showed different band gap values.
7能带结构的研究仅限于实验上,而且不同实验测量的能隙值不同。
3.
The results indicate that, with compressibility increasing , the width of band gap becomes wider,and that the interaction between Fe d electrons and S p electrons is stronger,and length of Fe-S bond becomes shorter.
计算结果表明 :随着压缩度的增加 ,外压调制下的Fe—S键长缩短 ,FeS2 小的能隙变宽 ,Fe的d电子与S的 p电子杂化增强 ,原子间相互作用增大。
4)  Bandgap ['bændɡæp]
能隙
1.
A Precise CMOS Bandgap Voltage Reference;
一种高精度CMOS能隙基准电压源
2.
A new low-voltage bandgap voltage reference was presented.
介绍了一种新型能隙基准电压源电路,此电路在smic0。
3.
Based upon analysis of several type s of bandgap voltage reference circuit, we demonstrate a high precision circuit of bandgap voltage reference with relatively simple structure for high-speed se rial link.
在分析了几种基准电压源的基础上 ,设计并实现了一种高精度用于高速串行通信接口的 CMOS能隙基准电压电路。
5)  Haldane equation
Haldane方程
6)  Haldane-Shastry model
Haldane-Shastry模型
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