1) trap filling
陷阱填充
1.
It is shown that the breakdown of PCSS fabricated from indirect band-gap semiconductors is determined mainly by limited conduction of trap filling, but for PCSS\'s fabricated from materials that exhibit the transferred-electron effect, such as GaAs, breakdown of the PCSS is caused mainly by the negative-resistance-induced electric field enhancement at the anode boundary.
分析了光电导开关在强场下的击穿机理,指出对于间接能带间隙光导材料(如Si)制作的光电导开关,开关的击穿电压主要由陷阱填充限制电导模型决定。
2) TFLC
陷阱填充限制电流
3) trap filled limited conduction model
陷阱填充电导模型
4) Notch-filling
凹陷填充
5) completing partial problem
缺陷填充问题
6) trap
[英][træp] [美][træp]
陷阱
1.
Study on Frequency Dispersion Effects of 4H-SiC MESFET Based on Traps;
基于陷阱的4H-SiC MESFET频散效应分析
2.
Walk Out the Trap of Immiserizing Growth:Based on View of Factor;
走出贫困化增长“陷阱”:基于要素性质的分析
3.
The Trap of the Collective Ownership of Land in Countrysides——Analysis Based on the Requisition of Land;
论农地集体所有制陷阱——基于农地征用视角的分析
补充资料：流动性偏好陷阱或凯恩斯陷阱（Keynes trap）
流动性偏好陷阱或凯恩斯陷阱（Keynes trap）：当利率极低，人们会认为这种利率不大可能再降，或者说有价证券市场价格不大可能上升而只会跌落时，人们不管有多少货币都愿意持在手中，这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条