1) ESD valve
ESD阀
2) ESD method
ESD法
3) ESD pulse
ESD脉冲
1.
Some integrated circuits were injected by rectangular pulse and ESD pulse for comparison of the damage effects caused by the two types of pulses.
采用方波脉冲和ESD脉冲对3种集成电路进行了注入损伤效应实验,目的是比较二者对器件损伤的异同之处。
4) ESD protection
ESD保护
1.
6μm BiCMOS process, because of the different internal base resistance, CEB, CEBE structures have better SNAPNACK effect and a high ESD protection efficiency than CBE, CBEB structures.
6μmN外延BiCMOS工艺为基础,研究了纵向NPN管的ESD保护行为,并对不同版图结构的纵向NPN管进行了ESD行为研究。
2.
The key problem originates from the complex interaction between the ESD protection circuitry and the core RF IC circuit under protection.
产生这一挑战的关键原因在于ESD保护电路和被保护的RF IC核电路之间存在着不可避免的复杂交互影响效应。
3.
In this thesis work, some CMOS on-chip ESD protections are investigated.
本论文主要研究了CMOS工艺中,集成电路片内ESD保护电路的设计。
5) ESD technology
ESD技术
6) ESD simulator
ESD模拟器
1.
It is found that different ESD simulators may yield inconsistent sensitivity test results for a certain EUT (equipment under test), though they both meet IEC61000- 4- 2 standard.
研究了静电放电抗扰度试验,发现满足IEC6100042标准规定的不同的ESD模拟器对同一试验对象所得实验结果不同;放电电流导数和模拟器内部开关继电器的电磁辐射对实验结果有很大影响。
2.
The method producing ESD EMP by ESD simulator was studied, and the waveform and frequency spectrum of the ESD EMP was given Based on the study of ESD simulator, the ESD EMP was produced firstly in GTEM cell by the cooperating of the ESD simulator and GTEM cell.
研究了用 ESD模拟器产生 ESD EMP的方法 ,并给出了 ESD EMP的时域波形和频谱。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条