1) reactive cosputtering
反应共溅射法
1.
We have fabricated the polycrystalline NixFe3–xO4 films and epitaxial NiFe_2O_4 films by reactive cosputtering Fe(DC) and Ni(DC) targets, and their structure, magnetic and transport properties were studied systematically.
本论文用直流反应共溅射法制备了NixFe3–xO4多晶薄膜和NiFe_2O_4外延薄膜,并对它们的结构、磁学性质和输运特性进行了系统研究。
2) reactive co-sputtering
共反应溅射
1.
A new gate dielectric material,HfTiON,is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by anneal in N2 at 600 °C and 800 °C respectively for 2 mins.
在N2/O2气氛中,使用Ti、Hf靶共反应溅射在衬底Si上淀积一种新型栅介质材料HfTiON,随后分别在N2气氛中600°C和800°C退火2min。
3) RF reactive co-sputtering
射频反应共溅射
1.
Indium-doped zinc oxide films of various contents of In were deposited on silicon substrates by RF reactive co-sputtering.
通过射频反应共溅射法在硅衬底上制备了不同In掺杂量的ZnO薄膜,表征了薄膜的结构和表面形貌,研究了In掺杂量对znO薄膜的结构特性的影响。
4) DC reactive co-sputtering
直流反应共溅射
6) RF reaction sputtering
射频反应溅射法
1.
Gas sensing characteristics of SnO_(2-x) films deposited by RF reaction sputtering
射频反应溅射法制备SnO_(2-x)纳米薄膜的气敏特性研究
补充资料：三级反应溅射
分子式：
分子量：
CAS号：
性质：见阴极溅射。
分子量：
CAS号：
性质：见阴极溅射。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条