1) SnO2-x film
SnO2-x薄膜
1.
X-ray diffraction analysis(XRD) and scanning electron microscopy(SEM) were used to study the effects of the deposition conditions on the crystallization and surface topography of SnO2-x film.
采用射频反应溅射法在不同氧气分压下制备SnO2-x薄膜,然后在不同温度下对其进行退火处理。
2) SnO2 thin film
SnO2薄膜
1.
Ag-doped SnO2 thin films are deposited on Al2O3 substrates by spin-coating using unalcolate sol-gel synthesis.
采用非醇盐溶胶—凝胶工艺在A l2O3基片上旋转涂敷制得掺Ag的SnO2薄膜。
3) electrical and gas sensitive properties
Y2O3-SnO2薄膜
4) SnO_2 thin film
SnO2薄膜
1.
The sensor element is the SnO_2 thin film doped Fe~(3+) which prepared by the Sol-gel method deposition on alumina tube.
传感器中气体敏感元件是利用溶胶-凝胶法在陶瓷管外表面制备的Fe3+搀杂SnO2薄膜。
5) nanosized SnO2-CuO thin films
SnO2-CuO薄膜
6) SnO2-TiO2 film
SnO2-TiO2薄膜
1.
The effect of SnO2-TiO2 film support on the electrocatalytic properties of Au-Pt nanoparticles was characterized via cyclic voltograme method.
采用真空镀膜法在玻碳(GC)电极表面修饰SnO2-TiO2薄膜,在SnO2-TiO2/GC复合电极表面组装Au-Pt双金属纳米颗粒,制得Au-Pt/SnO2-TiO2/GC复合电极。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条