A Calculation of energy band of crystal silicon using density functional theory and first-principles

To get the screw dislocation motion characteristic in the growing process of lattice mismatched heterostructures,a pair of screw dislocations is introduced in a full periodic Si crystal via dislocation dipole modeling.

We emphaticaly introduce some processes of Si-based photonic crystals,which are fine dry etching,silica sphere template,photoelectrochemical etching of macroporous silicon,photonic polymerization and silicon nanoclusters embedded at the Si core,etc.

As a representative,Intel Corporation is studying the sub-50-nm Si nanotransistors,and when they developed THz CMOS planar transistors,they overcame a lot of difficulties such as gate leakage current ,off-state leakage,resistance enhanced and higher operation voltage.