A Study on the Temperature Stability of Rapid Thermal Process

Sol-Gel method and rapid thermal process (RTP) were used to fabricate and crystallize Y_ 2.

The effects of rapid thermal process (RTP) on the DZ and oxygen precipitation of large diameter Czochralski silicon are investigated.

Rapid thermal process (RTP) was performed to heavily doped silicon wafers in Ar and N2 ambient.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes;

In isfound that rapid thermal annealing can improve the 77K photoluminescence efficiency and electronemission from the active layer, due to the removal of nonradiative centers from the InGaAs/GaAs interface.

BaSrTiO3(BST) thin films were deposited by radio frequency magnetron sputtering,and then treated by rapid thermal annealing process.

Redistribution of Ge Incorporated into Silicon Through Cryogenic Implantation After RTP;

The work is intended to examine the effect of rapid thermal processing (RTP) in different atmospheres (N 2,O 2,Ar) on the generation and annihilation of thermal donors (TDs) in silicon.

Nonocrystalline Si (nc Si) thin films were prepared by crystallization of the hydrogenaed amorphous Si (a Si) films using the three step Rapid Thermat Processing (RTP), i.

The XRD shows that conventional thermal annealing(CTA) is better than rapid thermal annealing(RTA) for the PZT thin films with(110) preferred orientation.

After rapid thermal annealing(RTA) in Ar atmosphera at high temperature,the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.

In this paper, the micro-structure and annealing behavior of void defect in large-diameter CZSi crystal have been systematically investigated by using AFM and RTA.

With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped (As and B) Si(001) substrates by rapid thermal processing (RTP).

Aluminum back surface field(BSF) fabricated by rapid thermal processing or conventional processing was investigated by the means of spreading resistance profile,X-ray diffraction and scanning electron microscope.

The antireflection properties of amorphous silicon nitride thin films are measured after rapid thermal processing(RTP) at different temperatures for different durations.