隧穿磁强计,tunneling magnetometer,音标,读音,翻译,英文例句,英语词典

您的位置：首页 -> 词典 -> 隧穿磁强计

1) tunneling magnetometer 点击朗读

隧穿磁强计

The straight girder easily arose fracture in the application of the horizontal tunneling magnetometer, as the maximum standing stress of the girder is not more than the permissible stress, and the driving voltage is very high that leads to limit the applied extension of magnetometer.

水平式隧穿磁强计在应用中,直梁所受的最大应力超出其许用应力出现直梁断裂的现象,同时由于所需驱动电压较高,限制了磁强计的应用范围。

更多例句>>

2) magnetic tunneling junction 点击朗读

磁隧穿结

3) magneto tunneling 点击朗读

磁隧穿

X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported.

报道了非对称ＧａＡｓ／ＡｌＡｓ双势垒结构（ＤＢＳ）中的Γ－Ｘ－Γ磁隧穿振荡现象，用磁场倒数周期求得ＡｌＡｓ层中Ｘ谷和ＧａＡｓ层中Γ谷之间的能带不连续值与通常公认值符合很好。

4) magnetic tunneling 点击朗读

磁滞隧穿

Spin-dependent transport of magnetic tunneling junction(MTJ) composed of Fe-filled Carbon Nanotube(CNT) has been investigated in this paper using first principle based on density function theory(DFT) coupled with Green Function.

文章利用基于密度泛函的第一性原理和格林函数相结合的方法研究了由铁磁性原子(Fe)填充(3,3)C纳米管构成的磁滞隧穿结的自旋输运性质。

5) tunneling magnetoresistance 点击朗读

隧穿磁电阻

The MTJs with tunneling magnetoresistance (TMR) ratio of 30%—48% can be directly obtained for the structure of Ta(5 nm)/Cu(25 nm)/Ni_ 79Fe_ 21(.

采用4nm厚的Co75Fe25为铁磁电极和1·0或0·8nm厚的铝氧化物为势垒膜,直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5nm)/Cu(25nm)/Ni79Fe21(5nm)/Ir22Mn78(10nm)/Co75Fe25(4nm)/Al(0·8nm)-O/Co75Fe25(4nm)/Ni79Fe21(20nm)/Ta(5nm)。

The typical values of junction resistance_area product and tunneling magnetoresistance (TMR) ratio of the MTJs are 16 kΩμm 2 and 18% respectively.

利用现有的光刻设备和工艺条件在 4英寸热氧化硅衬底上直接制备出的磁性隧道结 ,其结电阻与面积的积矢的绝对误差在 10 %以内 ,隧穿磁电阻的绝对误差在 7%以内 ,样品的磁性隧道结性质具有较好的均匀性和一致性 ,可以满足研制磁随机存储器存储单元演示器件的基本要

For example, the MTJs of Co/Al 2O 3/Co with a tunneling magnetoresistance (TMR) ratio of 17 2%, the junction resistance of .

例如 :利用狭缝宽度为 1 0 0 μm的金属掩模 ,直接制备出室温隧穿磁电阻比值为 1 7 2 %的磁性隧道结Co Al2 O3 Co,其结电阻为 76Ω ,结电阻和结面积的积矢为 76× 1 0 4 Ωμm2 ,自由层的偏转场为 1 1 1 4A m ,并且在外加磁场 0— 1 1 1 4A·m- 1 之间时室温磁电阻比值从零跳跃增加到 1 7 2 % ,磁场灵敏度达到 0 1 % (1 0 3A·m- 1 ) 。

更多例句>>

6) tunnel magnetoresistance 点击朗读

隧穿磁电阻

Based on the twoband model,we investigate the tunnel magnetoresistance(TMR) in ferromagentic tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field.

在两带模型的基础上，计算了外电场下有限厚铁磁层隧道结中的隧穿磁电阻（ＴＭＲ）。

The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance(TMR) and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer.

讨论了隧穿磁电阻(TMR)、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系。

更多例句>>

补充资料：潜隧

1.亦作"潜?"。 2.墓中隧道。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

参考词条

隧穿磁性宏观量子隧穿磁阻磁强计磁强计 SQUID磁强计

隧穿起始场强增强F-N隧穿隧穿型磁电阻隧穿磁电阻(TMR)

说明：双击或选中下面任意单词，将显示该词的音标、读音、翻译等；选中中文或多个词，将显示翻译。
	您的位置：首页 -> 词典 -> 隧穿磁强计 1) tunneling magnetometer 隧穿磁强计 1. The straight girder easily arose fracture in the application of the horizontal tunneling magnetometer, as the maximum standing stress of the girder is not more than the permissible stress, and the driving voltage is very high that leads to limit the applied extension of magnetometer. 水平式隧穿磁强计在应用中,直梁所受的最大应力超出其许用应力出现直梁断裂的现象,同时由于所需驱动电压较高,限制了磁强计的应用范围。更多例句>> 2) magnetic tunneling junction 磁隧穿结 3) magneto tunneling 磁隧穿 1. X Γ magneto tunneling oscillations in asymmetrical GaAs/AlAs double barrier structures (DBS) were reported. 报道了非对称ＧａＡｓ／ＡｌＡｓ双势垒结构（ＤＢＳ）中的Γ－Ｘ－Γ磁隧穿振荡现象，用磁场倒数周期求得ＡｌＡｓ层中Ｘ谷和ＧａＡｓ层中Γ谷之间的能带不连续值与通常公认值符合很好。 4) magnetic tunneling 磁滞隧穿 1. Spin-dependent transport of magnetic tunneling junction(MTJ) composed of Fe-filled Carbon Nanotube(CNT) has been investigated in this paper using first principle based on density function theory(DFT) coupled with Green Function. 文章利用基于密度泛函的第一性原理和格林函数相结合的方法研究了由铁磁性原子(Fe)填充(3,3)C纳米管构成的磁滞隧穿结的自旋输运性质。 5) tunneling magnetoresistance 隧穿磁电阻 1. The MTJs with tunneling magnetoresistance (TMR) ratio of 30%—48% can be directly obtained for the structure of Ta(5 nm)/Cu(25 nm)/Ni_ 79Fe_ 21(. 采用4nm厚的Co75Fe25为铁磁电极和1·0或0·8nm厚的铝氧化物为势垒膜,直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5nm)/Cu(25nm)/Ni79Fe21(5nm)/Ir22Mn78(10nm)/Co75Fe25(4nm)/Al(0·8nm)-O/Co75Fe25(4nm)/Ni79Fe21(20nm)/Ta(5nm)。 2. The typical values of junction resistance_area product and tunneling magnetoresistance (TMR) ratio of the MTJs are 16 kΩμm 2 and 18% respectively. 利用现有的光刻设备和工艺条件在 4英寸热氧化硅衬底上直接制备出的磁性隧道结 ,其结电阻与面积的积矢的绝对误差在 10 %以内 ,隧穿磁电阻的绝对误差在 7%以内 ,样品的磁性隧道结性质具有较好的均匀性和一致性 ,可以满足研制磁随机存储器存储单元演示器件的基本要 3. For example, the MTJs of Co/Al 2O 3/Co with a tunneling magnetoresistance (TMR) ratio of 17 2%, the junction resistance of . 例如 :利用狭缝宽度为 1 0 0 μm的金属掩模 ,直接制备出室温隧穿磁电阻比值为 1 7 2 %的磁性隧道结Co Al2 O3 Co,其结电阻为 76Ω ,结电阻和结面积的积矢为 76× 1 0 4 Ωμm2 ,自由层的偏转场为 1 1 1 4A m ,并且在外加磁场 0— 1 1 1 4A·m- 1 之间时室温磁电阻比值从零跳跃增加到 1 7 2 % ,磁场灵敏度达到 0 1 % (1 0 3A·m- 1 ) 。更多例句>> 6) tunnel magnetoresistance 隧穿磁电阻 1. Based on the twoband model,we investigate the tunnel magnetoresistance(TMR) in ferromagentic tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. 在两带模型的基础上，计算了外电场下有限厚铁磁层隧道结中的隧穿磁电阻（ＴＭＲ）。 2. The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance(TMR) and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer. 讨论了隧穿磁电阻(TMR)、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系。更多例句>> 补充资料：潜隧 1.亦作"潜?"。 2.墓中隧道。说明：补充资料仅用于学习参考，请勿用于其它任何用途。参考词条隧穿磁性宏观量子隧穿磁阻磁强计磁强计 SQUID磁强计

©2011 dictall.com