1) Cr-Si-C-N film
Cr-Si-C-N薄膜
1.
In this paper,Cr-Si-C -N films were prepared by cathode arc ion deposition technique,in which tetramethylsilane(TMS) was used as Si and C sources,and their concentrations in the Cr-Si-C-N films can be controlled by TMS flow.
采用电弧离子反应沉积技术在SCM415渗碳淬火钢基片上沉积了Cr-Si-C-N薄膜,三甲基硅烷(TMS)反应气体作为Si和C掺杂源,通过改变TMS流量实现了薄膜中Si和C含量的调节。
2) Cr-Si-N coating
Cr-Si-N薄膜
1.
Cr-Si-N coatings by incorporating several atomic percentage of Si to CrN were prepared,using an arc ion plating method.
利用电弧离子镀方法,在(SCM415)钢基体上制备了Cr-Si-N薄膜。
3) C-N-Cr film
C-N-Cr薄膜
1.
In this paper,the uniform,smooth and dense C-N-Cr films with different compositions were deposited on cemented carbide substrate at different nitrogen flow rates by pulsed bias arc ion plating.
用脉冲偏压电弧离子镀设备在保持偏压一致和工作气压恒定的条件下,控制不同氮(N)流量,在硬质合金基体上制备了不同成分的C-N-Cr薄膜。
5) Cr-N film
Cr-N薄膜
1.
Study of the oxidation resistance of Cr-N film;
Cr-N薄膜抗氧化性能的研究
2.
Cr-N films are deposited in this equipment, the influences of deposition parameters on the structure and properties of the films are analyzed, such as the ratio of gas (N2 and Ar),.
分析结果表明,Cr-N薄膜显著提高了基体的显微硬度和耐磨性,Cr-N薄膜硬度是基底硬度的4-8倍。
6) Si-C-H film
Si-C-H薄膜
1.
Si-C-H films,grown at 300 ℃ by rf plasma enhanced chemical vapor deposition (PECVD) with hydrogen-diluted silane and methane mixture, was annealed at 650 ℃ in nitrogen atmosphere.
本实验采用射频PECVD方法以高氢稀释的SiH4和CH4混合气体,在300℃低温下生长出了Si-C-H薄膜,并对沉积的薄膜在N2氛围中进行了退火研究。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条