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1)  electron beam co-evaporation
电子束共蒸发
1.
Al2O3-La2O3 (ALO) and ZrO2-Ta2O5 (ZTO) composite thin films with thicknesses of 414nm and 143nm, respectively, were prepared by electron beam co-evaporation and their dielectric performance was investigated with Sawyer-Tower circuit in this article.
文章采用电子束共蒸发法制备了厚度分别为414nm和143nm的Al2O3-La2O3(ALO)和ZrO2-Ta2O5(ZTO)复合薄膜,用Sawyer-Tower电路测得介电常数分别为17和34,反映介电损耗的参数△Vy分别为0。
2)  electron beam evaporation
电子束蒸发
1.
Photoelectrical properties and microstructure of ITO films prepared by electron beam evaporation;
电子束蒸发技术制备ITO薄膜的光电特性和微结构研究
2.
Characteristic study of nano ZnO films prepared by electron beam evaporation;
电子束蒸发制备纳米ZnO薄膜及其特性研究
3.
Roughness and light scattering properties of ZrO_2 thin films deposited by electron beam evaporation;
电子束蒸发氧化锆薄膜的粗糙度和光散射特性
3)  electron-beam evaporation
电子束蒸发
1.
Influence of substrate temperature on properties of ZnS films prepared by electron-beam evaporation
基片温度对电子束蒸发的ZnS薄膜性能的影响
2.
The Si/Co/Cu/Co multilayers are prepared by the ultra-high vacuum electron-beam evaporation on the Si(100) substrate.
用超高真空电子束蒸发方法在S i(100)衬底上制备了S i/Co/Cu/Co多层膜。
3.
With Al_2O_3 film deposited by electron-beam evaporation as an example, the technique of dielectric film wasintroduced.
以Al_2O_3薄膜为例,介绍了用电子束蒸发制备介质薄膜的工艺。
4)  E-beam evaporation
电子束蒸发
1.
Fabrication and properties of p-CuAlO_2 films by e-beam evaporation;
电子束蒸发制备CuAlO_2透明导电膜及光学性质
2.
A full automatic UHV e-beam evaporation control system for thin film growth
一种全自动超高真空电子束蒸发薄膜生长系统
3.
The work on fabrication of MgB_2 superconducting thin films via E-Beam evaporation approach is reported.
报道了采用电子束蒸发技术实现MgB2薄膜制备的实验工作。
5)  electron beam evaporation plating
电子束蒸发镀
1.
In this present paper,the operation technology for preparation of aluminium-chromium alloy coating by electron beam evaporation plating was studied.
研究了电子束蒸发镀沉积Al-Cr合金涂层的工艺 ,探讨了铬含量对涂层耐蚀性的影响 ,对涂层的物相、形貌以及热处理对涂层和基体之间热扩散的影响进行了分析 。
6)  Electron-beam evaporation
电子束蒸发沉积
补充资料:电子束
由阴极射线产生的束状电子流。电子显微镜和电视机就是利用电子束形成影像的。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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