1) N acceptor impurity
N受主掺杂
3) dual acceptor co-doping
双受主共掺杂
4) acceptor double_impurity doping technique
受主双质掺杂技术
1.
The acceptor double_impurity doping technique is introduced of combining the coating of aluminium emulsion with the gaseous phase Ga impurity to analyse the reasons for producing the surface layer defect,and the remedy measures for reducing the defect are given.
针对铝乳胶源涂布与气相Ｇａ杂质相结合的受主双质掺杂技术，分析了产生表面层缺陷的原因，并提出了减少缺陷的措
5) acceptor doping
受体掺杂
6) N-doped
N掺杂
1.
N-doped Visible Light Responsive Photocatalysts;
N掺杂可见光化催化剂的研究
2.
Preparation of N-doped TiO_2 photocatalyst and degradation of formaldehyhyde under visible light;
N掺杂TiO_2光催化剂的制备及其可见光降解甲醛
3.
Preparation and characterization of N-doped nano-TiO_2 photocatalyst
N掺杂纳米TiO_2光催化剂的制备与表征
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条