2) BN films
BN薄膜
1.
BN films were deposited by HFPECVD (hot filament plasma enhanced chemical vapor deposition).
本文介绍了用HFPECVD(hotfilamentplasmaenhancedchemicalvapordeposition)法制备BN薄膜。
2.
The field emission characteristics of the BN films were measured in a ultra high vacuum system.
在超高真空(<10-7Pa)系统中测量了BN薄膜的场发射特性,发现沉积时基底温度对BN薄膜的场发射特性有很大影响。
3) c-BN thin film
c-BN薄膜
1.
Wide bandgap c-BN thin films of high quality have been developed recently and their structural characteristics determined.
0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 。
4) BN thin films
BN薄膜
1.
Influence of substrate bias on field emission characteristics of BN thin films;
基底偏压对BN薄膜场发射特性的影响(英文)
2.
H-BN thin films were prepared on the (100)-oriented surface of n-Si(0.
红外光谱分析表明 ,BN薄膜结构为六角BN(h -BN)相 (1380cm-1和 780cm-1)。
3.
BN thin films were prepared on the (100)-oriented surface of n-Si by r.
利用射频磁控溅射方法,在n型(100)Si基底上沉积了氮化硼(BN)薄膜,并在超高真空系统中测量了BN薄膜的场发射特性。
5) E-BN thin film
E-BN薄膜
6) o-BN films
o-BN 薄膜
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条