To fabricate the CGH, the electronic beam lithography is used to exposure the rectangle holes on the SiN film firstly, and then the ICP is used to etch the holes anisotropically The technological process is discussed in detail and in the end a photograph of SiN film CGH is shown.

The effects of electrode materials on dielectric properties of BST thin films;

Using water-based solution as precursors, BST thin films were fabricated by spin coating technique.

BST thin film has outstanding dielectric property.

Temperature characteristics of leakage current of BST thin films;

Preparation,dielectric properties of BST thin films by plused laser deposition;

Fabrication of BST thin films by sol-gel method and dielectric tunable properties;

It is difficult to obtain the heteroepitaxial growth of BST thin film on silicon substrate due to the interface diffusion.

Among these materials, the properties of BST thin films are excellent.

The thermal sensitive BST ferroelectric thin film capacitors for uncooled infrared focal plane array prepared by Radio frequency Magnetron sputtering have been investigated by focusing on the condition of fabrication of electrode and BST thin film.