1) BST pyroelectric thin film
BST热释电薄膜
2) BST ferroelectric thin film
BST铁电薄膜
1.
The thermal sensitive BST ferroelectric thin film capacitors for uncooled infrared focal plane array prepared by Radio frequency Magnetron sputtering have been investigated by focusing on the condition of fabrication of electrode and BST thin film.
实验结果表明BST铁电薄膜热敏电容器可以工作在室温附近 ,约 2 6℃
3) Pyroelectric thin films
热释电薄膜
1.
Two kinds of multicomposition composite ungradient KTN pyroelectric thin films for high pyroelectric coefficient within broad temperature region were prepared via sol-gel method on the Pt/Ti/SiO2/Si substracts.
为使KTN热释电薄膜能够在较宽的温度范围内有较高的热释电系数,本文在Pt/Ti/SiO2/Si基片上采用Sol-Gel法制备了两种多组分成分非梯度分布的KTN热释电薄膜。
4) BST thin film
BST薄膜
1.
The effects of electrode materials on dielectric properties of BST thin films;
电极材料对BST薄膜介电性能的影响
2.
Using water-based solution as precursors, BST thin films were fabricated by spin coating technique.
薄膜的相结构研究表明,随着退火温度的上升,BST薄膜的结晶度上升,而晶粒尺寸随之略有下降。
3.
BST thin film has outstanding dielectric property.
BST铁电薄膜具有优异的介电性能,电极材料特别是底电极材料,影响并决定BST薄膜的电学及介电行为,选择合适的电极材料对BST薄膜的性能至关重要,本文综述了电极材料对BST薄膜结构和介电性能的影响以及此方面的最新研究成果。
5) BST thin films
BST薄膜
1.
Temperature characteristics of leakage current of BST thin films;
BST薄膜漏电流温度特性研究
2.
Preparation,dielectric properties of BST thin films by plused laser deposition;
PLD法制备BST薄膜及其介电性能研究
3.
Fabrication of BST thin films by sol-gel method and dielectric tunable properties;
sol-gel法制备BST薄膜及介电调谐性能
6) BST thin film
BST 薄膜
1.
It is difficult to obtain the heteroepitaxial growth of BST thin film on silicon substrate due to the interface diffusion.
由于界面之间的扩散,很难取得在 Si 基片上 BST 薄膜的外延。
2.
Among these materials, the properties of BST thin films are excellent.
本文采用溶胶-凝胶法,对制备适合应用于非制冷红外焦平面阵列的BST 薄膜材料进行了研究。
补充资料：热释电
分子式：
CAS号：
性质：又称热刺激电流。以一定的升温速度加热高聚物驻极体，则原来“冻结”的极化电荷就要释放出来，这种现象就称为热释电。通过此方法可测定高分子的玻璃化转变，研究高分子压电性能及高分子运动多重转变。
CAS号：
性质：又称热刺激电流。以一定的升温速度加热高聚物驻极体，则原来“冻结”的极化电荷就要释放出来，这种现象就称为热释电。通过此方法可测定高分子的玻璃化转变，研究高分子压电性能及高分子运动多重转变。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条