2) PAECE
光辅助电化学刻蚀法
1.
The main four fabrication techniques, namely laser drilling, wet etching, DRIE (deep reactive ion etching) and PAECE (photo assisted electro-chemical etching), are described in detail from the several aspects of principle, process, advantages and disadvantages.
介绍了硅基片微型通孔的用途及在微机电系统发展中的重要性,从原理、过程、优缺点等方面详细叙述了激光打孔法、湿法刻蚀法、深度反应离子刻蚀法(DRIE)和光辅助电化学刻蚀法(PAECE)等四种硅基片微型通孔的加工方法,并对各种方法进行了比较,提出了各种方法的适用范围。
3) Laser assisted chemical etching
激光辅助化学刻蚀
1.
The laser assisted chemical etching was proposed to apply in the etching of YBCO high temperature superconductor(HTS)film,which was a significant application involving superconductor electronics,laser technique and chemistry.
提出了将激光辅助化学刻蚀技术应用于钇钡铜氧(YBCO)高温超导薄膜的刻蚀,研究了无掩膜YBCO薄膜激光化学刻蚀的表面特性及其变化规律,为YBCO激光化学刻蚀技术中图形形状控制、刻蚀时间选择和激光功率调节等提供了重要的实验结论。
2.
The laser assisted chemical etching was proposed to apply in the etching of YBCO high temperature superconductor film.
提出了将激光辅助化学刻蚀技术应用于钇钡铜氧(YBCO)高温超导薄膜的刻蚀,研究了无掩膜YBCO薄膜激光化学刻蚀的表面特性及其变化规律,在激光辐照下,YBCO薄膜的液相刻蚀速率大大加快,并且在整个过程中,刻蚀速率呈现加快趋势,这一特性将有可能用于改善YBCO刻蚀中的横向钻蚀情况,并提高图形边缘的侧壁陡峭度。
4) chemically assisted ion beam etching
化学辅助离子束刻蚀
5) Silicon photo-electrochemical etching
硅光电化学刻蚀
补充资料：光辅
1.多方面辅佐。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条