1) GeSi quantum rings
锗硅量子环
2) Si/Ge quantum wells
锗硅量子阱
1.
The band-to-band absorption edges of Si/Ge quantum wells were characterized by photocurrent measurement.
利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究。
3) SiGe quantum wells
硅锗量子阱
4) GeSi quantum dot
锗硅量子点
1.
Such pit-patterned Si substrates facilitate the formation of ordered GeSi quantum dot by deposition of Ge using molecular beam epitaxy(MBE).
由此制作的坑形图案衬底上用分子束外延系统生长锗硅量子点,可以实现对锗硅量子点成核位置的控制。
5) SiGe multi quantum wells
硅锗多量子阱
6) Ge/Si
锗/硅
1.
Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories;
锗/硅异质纳米结构中空穴存储特性研究
2.
p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array;
p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列
3.
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条